EPC2252 Automotive Qualified 80 V GaN FET

EPC’s enhancement mode power transistor is ideal for designing higher-resolution LiDAR systems

Image of EPC's EPC2252 Automotive Qualified 80 V GaN FETEPC’s EPC2252 80 V, 11 mΩ transistor delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade LiDAR found in autonomous driving and other ADAS applications, 48 VDC/DC to 12 VDC/DC conversion, and low inductance motor drives.

The fast-switching speed of GaN, with sub-nanosecond transitions and the capability to generate high-current pulses in less than 3 ns, results in longer range and higher resolution in LiDAR for autonomous driving, parking, and collision avoidance.

Features
  • High switching frequency
  • ID: 8.2 A
  • VDS: 80 V
  • RDS(ON): 11 mΩ max
  • Ultra-small footprint: 1.5 mm x 1.5 mm
  • High efficiency
  • AEC-Q101 qualified
Applications
  • 48 V automotive DC/DC conversion
    • Mild hybrid electric vehicles
    • Infotainment
  • Automotive LiDAR
    • Autonomous vehicles
    • eMobility
  • 48 V servers
  • Point-of-load converters
  • Class-D audio
  • LED lighting
  • Low-inductance motor drives

EPC2252 Automotive Qualified 80 V GaN FET

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
TRANSGAN 80V.011OHM AECQ101 9BGAEPC2252TRANSGAN 80V.011OHM AECQ101 9BGA14159 - Immediate$21.32View Details
Published: 2023-01-27