EPC2252 Automotive Qualified 80 V GaN FET
EPC’s enhancement mode power transistor is ideal for designing higher-resolution LiDAR systems
EPC’s EPC2252 80 V, 11 mΩ transistor delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade LiDAR found in autonomous driving and other ADAS applications, 48 VDC/DC to 12 VDC/DC conversion, and low inductance motor drives.
The fast-switching speed of GaN, with sub-nanosecond transitions and the capability to generate high-current pulses in less than 3 ns, results in longer range and higher resolution in LiDAR for autonomous driving, parking, and collision avoidance.
- High switching frequency
- ID: 8.2 A
- VDS: 80 V
- RDS(ON): 11 mΩ max
- Ultra-small footprint: 1.5 mm x 1.5 mm
- High efficiency
- AEC-Q101 qualified
- 48 V automotive DC/DC conversion
- Mild hybrid electric vehicles
- Infotainment
- Automotive LiDAR
- Autonomous vehicles
- eMobility
- 48 V servers
- Point-of-load converters
- Class-D audio
- LED lighting
- Low-inductance motor drives
EPC2252 Automotive Qualified 80 V GaN FET
Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
---|---|---|---|---|---|---|
![]() | ![]() | EPC2252 | TRANSGAN 80V.011OHM AECQ101 9BGA | 14159 - Immediate | $21.32 | View Details |