EPC2112/EPC2115 eGaN® ICs

EPC's EPC2112/EPC2115 eGaN ICs are designed for high-frequency DC/DC converters and resonant wireless power

Image of EPC's EPC2112 and EPC2115 eGaN ICsEPC’s GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency while maintaining a small footprint.

The EPC2112 is a 200 V, 40 mΩ eGaN FET plus integrated gate driver.

The EPC2115 is an integrated circuit with dual 150 V, 70 mΩ eGaN FETs plus gate driver.

Features
  • High-frequency capability
    • Monolithic integration eliminates interconnect inductances for higher efficiency at higher frequency
    • Capable of operating up to 7 MHz
  • Small footprint
    • Low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die
Applications
 
  • High-frequency DC/DC converters
 
  • Resonant wireless power

EPC2112 eGaN® IC

ImageManufacturer Part NumberDescriptionInterfaceCurrent - Peak OutputVoltage - SupplyAvailable QuantityPriceView Details
IC LOW SIDE DRIVER 10A 10BGAEPC2112ENGRTIC LOW SIDE DRIVER 10A 10BGAOn/Off40A4.5V ~ 5.5V0 - Immediate$25.99View Details

EPC2115 eGaN® IC

ImageManufacturer Part NumberDescriptionInterfaceCurrent - Peak OutputVoltage - SupplyAvailable QuantityPriceView Details
IC LOW SIDE DRIVER 5A 10BGAEPC2115ENGRTIC LOW SIDE DRIVER 5A 10BGAOn/Off18A4.5V ~ 5.5V0 - Immediate$27.56View Details
Published: 2018-05-04