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EPC2111 30 V eGaN® Transistor Half-Bridge
EPC's EPC2111 enhancement-mode GaN power transistor half-bridge increases both efficiency and power density
EPC’s 30 V eGaN half-bridge, EPC2111, integrates two eGaN power FETs into a single device increasing both efficiency and power density while reducing assembly costs to the end user’s power conversion systems. The EPC2111 comes in a chip-scale package for improved switching speed and thermal performance and is only 3.5 mm x 1.5 mm for increased power density. A primary application for this device is for notebook and tablet computing. The high-frequency capability of GaN reduces the size required for power conversion and thus will drive significant size reductions of next-generation mobile computing.
Features
- High-frequency capability
- Monolithic integration eliminates interconnect inductances for higher efficiency at a higher frequency
- High efficiency
- Lower conduction and switching losses, zero reverse recovery losses
- Small footprint
- Low inductance, extremely small, 3.5 mm x 1.55 mm BGA surface-mount passivated die
Applications
- High-frequency DC/DC power conversion
- Notebook and tablet computing
EPC2111 30 V eGaN® Transistor Half-Bridge
| Image | Manufacturer Part Number | Description | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|---|---|---|
 |  | EPC2111 | MOSFET 2N-CH 30V 16A DIE | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 2mA, 2.5V @ 5mA | 18847 - Immediate | $35.64 | View Details |
Evaluation Boards
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
|  | EPC9086 | EVAL BOARD FOR EPC2111 | 19 - Immediate | $1,623.07 | View Details |
|  | EPC9204 | EVAL BOARD FOR EPC2111 | 0 - Immediate | $1,074.08 | View Details |
Published: 2019-08-16
Hong Kong, China