DFN0606 NPN and PNP Transistors

Occupying a board space of only 0.36 mm², Diodes' DFN0606 transistors are 40% smaller than the directly competing DFN1006 (SOT883) parts and deliver the same or better electrical performance. With their off-board height of only 0.4 mm, they are ideally suited for wearable technology, such as smart watches, health and fitness devices, as well as other space-constrained consumer products such as smartphones and tablets.

Diodes' initial DFN0606 bipolar transistor offerings are two NPN and PNP devices handling a power dissipation performance as high as 830 mW. The 40 V-rated MMBT3904FZ and MMBT3906FZ significantly boost power density and also provide a high-200 mA collector current; while the 45 V-rated BC847BFZ and BC857BFZ provide a collector current of 100 mA. All devices switch on at a base-emitter voltage of less than 1 V, enabling them to be fully-turned on under conditions of very-low-portable power.

Features

• 0.36 mm² footprint and 0.4 mm off-board height - small form factor allows designer’s to reduce PCB area while delivering better performance than equivalent transistors in much larger packages
• Higher-power density - DFN0606 leadless package is thermally efficient with a thermal resistance of only 135°C/W enabling a greater power density to be achieved
• Turn-on VBE <1 V - BJTs enable low-voltage applications to switch at less than 1 V enabling portable applications to be fully-turned-on under low-power conditions