HMC8411 Low-Noise Amplifier

Analog Devices' HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. It provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (P_SAT) of 19.5 dBm (typical) enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices' balanced, in-phase/quadrature (I/Q) or image rejection mixers.

The HMC8411LP2FE also features inputs and outputs internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high-capacity microwave radio applications. It is housed in a RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP. The EV1HMC8411LP2F evaluation board is a 2-layer board fabricated using Rogers 4350 and using best practices for high-frequency RF design. The RF input and RF output traces have a 50 Ω characteristic impedance.