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SI5935CDC-T1-GE3 Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Price & Procurement
42,387 In Stock
Can ship immediately
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 4.48000 HK$4.48
10 3.80100 HK$38.01
25 3.54800 HK$88.70
100 2.63560 HK$263.56
500 2.05782 HK$1,028.91
1,000 1.67261 HK$1,672.61

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI5935CDC-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 39,000 - Immediate
  • Unit Price: HK$1.57124
  • Digi-Reel®  : SI5935CDC-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 42,387 - Immediate
  • Unit Price: Digi-Reel®

SI5935CDC-T1-GE3

Datasheet
Digi-Key Part Number SI5935CDC-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI5935CDC-T1-GE3
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Description MOSFET 2P-CH 20V 4A 1206-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 1206-8 ChipFET™

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Customer Reference
Documents & Media
Datasheets SI5935CDC
HTML Datasheet SI5935CDC
EDA / CAD Models SI5935CDC-T1-GE3 by SnapEDA
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 100mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Part Number SI5935
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI5935CDC-T1-GE3CT