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SI5457DC-T1-GE3 P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™
Price & Procurement
39,191 In Stock
Can ship immediately
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 4.65000 HK$4.65
10 3.96200 HK$39.62
25 3.69680 HK$92.42
100 2.74540 HK$274.54
500 2.14364 HK$1,071.82
1,000 1.74230 HK$1,742.30

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI5457DC-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 39,000 - Immediate
  • Unit Price: HK$1.63670
  • Digi-Reel®  : SI5457DC-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 39,191 - Immediate
  • Unit Price: Digi-Reel®

SI5457DC-T1-GE3

Datasheet
Digi-Key Part Number SI5457DC-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI5457DC-T1-GE3
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Description MOSFET P-CH 20V 6A CHIPFET
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™

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Customer Reference
Documents & Media
Datasheets SI5457DC
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI5457DC
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 36mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
FET Feature -
Power Dissipation (Max) 5.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
Base Part Number SI5457
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI5457DC-T1-GE3CT