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SI2371EDS-T1-GE3 P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23
Price & Procurement
63,906 In Stock
Can ship immediately
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 3.46000 HK$3.46
10 2.57600 HK$25.76
25 2.32480 HK$58.12
100 1.22490 HK$122.49
500 1.08550 HK$542.75
1,000 0.84475 HK$844.75

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI2371EDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 63,000 - Immediate
  • Unit Price: HK$0.77295
  • Digi-Reel®  : SI2371EDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 63,906 - Immediate
  • Unit Price: Digi-Reel®

SI2371EDS-T1-GE3

Datasheet
Digi-Key Part Number SI2371EDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2371EDS-T1-GE3
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Description MOSFET P-CH 30V 4.8A SOT-23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23

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Customer Reference
Documents & Media
Datasheets SI2371EDS
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Wafer Fab Addition 22/Jun/2015
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2371
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2371EDS-T1-GE3CT