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All prices are in HKD.
Price Break Unit Price Extended Price
3,000 1.30516 $3,915.48
6,000 1.26305 $7,578.30

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Alternate Package

SI2369DS-T1-GE3

Datasheet
Digi-Key Part Number SI2369DS-T1-GE3TR-ND
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Manufacturer

Vishay Siliconix

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Manufacturer Part Number SI2369DS-T1-GE3
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Description MOSFET P-CH 30V 7.6A TO236
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Detailed Description

P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SI2369DS
Environmental Information Material Compliance
REACH 211 Cert, SVHC
PCN Assembly/Origin Wafer Fab Addition 22/Jun/2015
HTML Datasheet SI2369DS
EDA / CAD Models SI2369DS-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 15V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2369
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 3,000
Other Names SI2369DS-T1-GE3TR