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SI2369DS-T1-GE3 P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236
Price & Procurement
42,819 In Stock
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Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 3.38000 HK$3.38
10 2.86400 HK$28.64
25 2.67600 HK$66.90
100 1.98770 HK$198.77
500 1.55198 HK$775.99
1,000 1.26147 HK$1,261.47

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Alternate Package
  • Tape & Reel (TR)  : SI2369DS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 42,000 - Immediate
  • Unit Price: HK$1.18499
  • Digi-Reel®  : SI2369DS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 42,819 - Immediate
  • Unit Price: Digi-Reel®

SI2369DS-T1-GE3

Datasheet
Digi-Key Part Number SI2369DS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2369DS-T1-GE3
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Description MOSFET P-CH 30V 7.6A TO-236
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236

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Customer Reference
Documents & Media
Datasheets SI2369DS
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Wafer Fab Addition 22/Jun/2015
HTML Datasheet SI2369DS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 15V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2369
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2369DS-T1-GE3CT