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SI2309CDS-T1-GE3 P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
89 In Stock
Can ship immediately
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 4.48000 HK$4.48
10 3.80100 HK$38.01
25 3.54800 HK$88.70
100 2.63560 HK$263.56
500 2.05782 HK$1,028.91
1,000 1.67261 HK$1,672.61

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Alternate Package

SI2309CDS-T1-GE3

Datasheet
Digi-Key Part Number SI2309CDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2309CDS-T1-GE3
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Description MOSFET P-CH 60V 1.6A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SI2309CDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI2309CDS
EDA / CAD Models SI2309CDS-T1-GE3 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 30V
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2309
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2309CDS-T1-GE3CT