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SI2307CDS-T1-GE3 P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
34,316 In Stock
Can ship immediately
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 3.38000 HK$3.38
10 2.92300 HK$29.23
25 2.72680 HK$68.17
100 2.02490 HK$202.49
500 1.58104 HK$790.52
1,000 1.28512 HK$1,285.12

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Alternate Package
  • Tape & Reel (TR)  : SI2307CDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 33,000 - Immediate
  • Unit Price: HK$1.20723
  • Digi-Reel®  : SI2307CDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 34,316 - Immediate
  • Unit Price: Digi-Reel®

SI2307CDS-T1-GE3

Datasheet
Digi-Key Part Number SI2307CDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2307CDS-T1-GE3
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Description MOSFET P-CH 30V 3.5A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

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Customer Reference
Documents & Media
Datasheets SI2307CDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI2307CDS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 1.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2307
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2307CDS-T1-GE3CT