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SI1021R-T1-GE3 P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A
Price & Procurement
30,206 In Stock
Can ship immediately
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 3.72000 HK$3.72
10 3.16800 HK$31.68
25 2.95680 HK$73.92
100 2.19640 HK$219.64
500 1.71484 HK$857.42
1,000 1.39384 HK$1,393.84

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI1021R-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 27,000 - Immediate
  • Unit Price: HK$1.30936
  • Digi-Reel®  : SI1021R-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 30,206 - Immediate
  • Unit Price: Digi-Reel®

SI1021R-T1-GE3

Datasheet
Digi-Key Part Number SI1021R-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1021R-T1-GE3
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Description MOSFET P-CH 60V 190MA SC-75A
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A

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Customer Reference
Documents & Media
Datasheets SI1021R
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI1021R
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V
FET Feature -
Power Dissipation (Max) 250mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-75A
Package / Case SC-75A
Base Part Number SI1021
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1021R-T1-GE3CT