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STP150NF55 N-Channel 55V 120A (Tc) 300W (Tc) Through Hole TO-220AB
Price & Procurement
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 37.39000 HK$37.39
50 30.02980 HK$1,501.49
100 27.36030 HK$2,736.03
500 22.15500 HK$11,077.50
1,000 18.68500 HK$18,685.00

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number 497-6117-5-ND
Copy   497-6117-5-ND
Quantity Available 5,844
Can ship immediately
Manufacturer

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Manufacturer Part Number

STP150NF55

Copy   STP150NF55
Description MOSFET N-CH 55V 120A TO-220
Copy   MOSFET N-CH 55V 120A TO-220
Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 55V 120A (Tc) 300W (Tc) Through Hole TO-220AB

Copy   N-Channel 55V 120A (Tc) 300W (Tc) Through Hole TO-220AB
Documents & Media
Datasheets STx150NF55
Other Related Documents STP150NF55 View All Specifications
Product Training Modules Automotive Grade Transistors and Discretes
STMicroelectronics ST MOSFETs
Simulation Models STP150NF55 Spice Model
EDA / CAD Models ? Download from Ultra Librarian
Catalog Page 1186 (HK092-10 PDF)
Product Attributes Select All
Categories
Manufacturer STMicroelectronics
Series STripFET™ II
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 50
Other Names 497-6117-5

13:34:00 4/24/2019