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IRLMS2002TRPBF N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micro6™(SOT23-6)
Price & Procurement
36,524 In Stock
Can ship immediately
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 5.41000 HK$5.41
10 4.60400 HK$46.04
25 4.29480 HK$107.37
100 3.18890 HK$318.89
500 2.48998 HK$1,244.99
1,000 2.02385 HK$2,023.85

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : IRLMS2002PBFTR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 33,000 - Immediate
  • Unit Price: HK$1.90119
  • Digi-Reel®  : IRLMS2002PBFDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 36,524 - Immediate
  • Unit Price: Digi-Reel®

IRLMS2002TRPBF

Datasheet
Digi-Key Part Number IRLMS2002PBFCT-ND
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Manufacturer

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Manufacturer Part Number IRLMS2002TRPBF
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Description MOSFET N-CH 20V 6.5A 6-TSOP
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Manufacturer Standard Lead Time 13 Weeks
Detailed Description

N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micro6™(SOT23-6)

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro6™(SOT23-6)
Package / Case SOT-23-6
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names *IRLMS2002TRPBF
IRLMS2002PBFCT