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IRLML2803TRPBF N-Channel 30V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23
Price & Procurement
58,501 In Stock
Can ship immediately
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 3.80000 HK$3.80
10 2.84700 HK$28.47
25 2.56480 HK$64.12
100 1.35240 HK$135.24
500 1.19836 HK$599.18
1,000 0.93260 HK$932.60

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : IRLML2803PBFTR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 57,000 - Immediate
  • Unit Price: HK$0.85334
  • Digi-Reel®  : IRLML2803PBFDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 58,601 - Immediate
  • Unit Price: Digi-Reel®

IRLML2803TRPBF

Datasheet
Digi-Key Part Number IRLML2803PBFCT-ND
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Manufacturer

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Manufacturer Part Number IRLML2803TRPBF
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Description MOSFET N-CH 30V 1.2A SOT-23
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Manufacturer Standard Lead Time 13 Weeks
Detailed Description

N-Channel 30V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 910mA, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V
FET Feature -
Power Dissipation (Max) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IRLML2803GTRPBFCT
IRLML2803GTRPBFCT-ND
IRLML2803PBFCT