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SQ2309 Vishay Siliconix - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
HKD
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SQ2309ES-T1_GE3 Datasheet SQ2309ES-T1_GE3 - Vishay Siliconix SQ2309ES-T1_GE3TR-ND SQ2309ES-T1_GE3 MOSFET P-CHAN 60V SOT23 12,000 - Immediate Available: 12,000 HK$1.57124 3,000 Minimum: 3,000 Tape & Reel (TR)
Alternate Packaging
Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60V 1.7A (Tc) 4.5V, 10V 336mOhm @ 3.8A, 10V 2.5V @ 250µA 8.5nC @ 10V ±20V 265pF @ 25V
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2W (Tc) -55°C ~ 175°C (TJ) Surface Mount TO-236 (SOT-23) TO-236-3, SC-59, SOT-23-3
SQ2309ES-T1_GE3 Datasheet SQ2309ES-T1_GE3 - Vishay Siliconix SQ2309ES-T1_GE3CT-ND SQ2309ES-T1_GE3 MOSFET P-CHAN 60V SOT23 13,523 - Immediate Available: 13,523 HK$4.48000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60V 1.7A (Tc) 4.5V, 10V 336mOhm @ 3.8A, 10V 2.5V @ 250µA 8.5nC @ 10V ±20V 265pF @ 25V
-
2W (Tc) -55°C ~ 175°C (TJ) Surface Mount TO-236 (SOT-23) TO-236-3, SC-59, SOT-23-3
SQ2309ES-T1_GE3 Datasheet SQ2309ES-T1_GE3 - Vishay Siliconix SQ2309ES-T1_GE3DKR-ND SQ2309ES-T1_GE3 MOSFET P-CHAN 60V SOT23 13,523 - Immediate Available: 13,523 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60V 1.7A (Tc) 4.5V, 10V 336mOhm @ 3.8A, 10V 2.5V @ 250µA 8.5nC @ 10V ±20V 265pF @ 25V
-
2W (Tc) -55°C ~ 175°C (TJ) Surface Mount TO-236 (SOT-23) TO-236-3, SC-59, SOT-23-3
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10:02:05 11/29/2020