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SI2369 Vishay Siliconix - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
HKD
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SI2369DS-T1-GE3 Datasheet SI2369DS-T1-GE3 - Vishay Siliconix SI2369DS-T1-GE3TR-ND SI2369DS-T1-GE3 MOSFET P-CH 30V 7.6A TO-236 39,000 - Immediate Available: 39,000 HK$1.18499 3,000 Minimum: 3,000 Tape & Reel (TR)
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30V 7.6A (Tc) 4.5V, 10V 29mOhm @ 5.4A, 10V 2.5V @ 250µA 36nC @ 10V ±20V 1295pF @ 15V
-
1.25W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount TO-236 TO-236-3, SC-59, SOT-23-3
SI2369DS-T1-GE3 Datasheet SI2369DS-T1-GE3 - Vishay Siliconix SI2369DS-T1-GE3CT-ND SI2369DS-T1-GE3 MOSFET P-CH 30V 7.6A TO-236 40,139 - Immediate Available: 40,139 HK$3.38000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30V 7.6A (Tc) 4.5V, 10V 29mOhm @ 5.4A, 10V 2.5V @ 250µA 36nC @ 10V ±20V 1295pF @ 15V
-
1.25W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount TO-236 TO-236-3, SC-59, SOT-23-3
SI2369DS-T1-GE3 Datasheet SI2369DS-T1-GE3 - Vishay Siliconix SI2369DS-T1-GE3DKR-ND SI2369DS-T1-GE3 MOSFET P-CH 30V 7.6A TO-236 40,139 - Immediate Available: 40,139 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30V 7.6A (Tc) 4.5V, 10V 29mOhm @ 5.4A, 10V 2.5V @ 250µA 36nC @ 10V ±20V 1295pF @ 15V
-
1.25W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount TO-236 TO-236-3, SC-59, SOT-23-3
SI2369BDS-T1-GE3 Datasheet Photo Not Available 742-SI2369BDS-T1-GE3TR-ND SI2369BDS-T1-GE3 MOSFET P-CH 30 V SOT-23 3,000 - Immediate Available: 3,000 HK$1.19794 3,000 Minimum: 3,000 Tape & Reel (TR)
Alternate Packaging
TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30V 5.6A (Ta), 7.5A (Tc) 4.5V, 10V 27mOhm @ 5A, 10V 2.2V @ 250µA 19.5nC @ 10V +16V, -20V 745pF @ 15V
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1.3W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
SI2369BDS-T1-GE3 Datasheet Photo Not Available 742-SI2369BDS-T1-GE3CT-ND SI2369BDS-T1-GE3 MOSFET P-CH 30 V SOT-23 4,894 - Immediate Available: 4,894 HK$4.22000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30V 5.6A (Ta), 7.5A (Tc) 4.5V, 10V 27mOhm @ 5A, 10V 2.2V @ 250µA 19.5nC @ 10V +16V, -20V 745pF @ 15V
-
1.3W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
SI2369BDS-T1-GE3 Datasheet Photo Not Available 742-SI2369BDS-T1-GE3DKR-ND SI2369BDS-T1-GE3 MOSFET P-CH 30 V SOT-23 4,894 - Immediate Available: 4,894 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30V 5.6A (Ta), 7.5A (Tc) 4.5V, 10V 27mOhm @ 5A, 10V 2.2V @ 250µA 19.5nC @ 10V +16V, -20V 745pF @ 15V
-
1.3W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
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04:02:00 11/24/2020