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SI2300 Vishay Siliconix - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
HKD
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SI2300DS-T1-GE3 Datasheet SI2300DS-T1-GE3 - Vishay Siliconix SI2300DS-T1-GE3TR-ND SI2300DS-T1-GE3 MOSFET N-CH 30V 3.6A SOT-23 3,000 - Immediate Available: 3,000 HK$1.17843 3,000 Minimum: 3,000 Tape & Reel (TR)
Alternate Packaging
TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30V 3.6A (Tc) 2.5V, 4.5V 68mOhm @ 2.9A, 4.5V 1.5V @ 250µA 10nC @ 10V ±12V 320pF @ 15V
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1.1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
SI2300DS-T1-GE3 Datasheet SI2300DS-T1-GE3 - Vishay Siliconix SI2300DS-T1-GE3CT-ND SI2300DS-T1-GE3 MOSFET N-CH 30V 3.6A SOT-23 3,295 - Immediate Available: 3,295 HK$3.29000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30V 3.6A (Tc) 2.5V, 4.5V 68mOhm @ 2.9A, 4.5V 1.5V @ 250µA 10nC @ 10V ±12V 320pF @ 15V
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1.1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
SI2300DS-T1-GE3 Datasheet SI2300DS-T1-GE3 - Vishay Siliconix SI2300DS-T1-GE3DKR-ND SI2300DS-T1-GE3 MOSFET N-CH 30V 3.6A SOT-23 3,295 - Immediate Available: 3,295 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30V 3.6A (Tc) 2.5V, 4.5V 68mOhm @ 2.9A, 4.5V 1.5V @ 250µA 10nC @ 10V ±12V 320pF @ 15V
-
1.1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 (TO-236) TO-236-3, SC-59, SOT-23-3
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13:34:11 11/29/2020