BAS16H Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
February, 2019 Rev. 13
1Publication Order Number:
BAS16HT1/D
BAS16H
Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR100 V
Peak Forward Current IF200 mA
NonRepetitive Peak Forward Surge
Current, 60 Hz
IFSM(surge) 1.8 A
Repetitive Peak Forward Current
(Note 2)
IFRM 1.0 A
NonRepetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 s
IFSM
36.0
18.0
6.0
3.0
1.8
1.3
1.0
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance Junction to Ambient RqJA 635 °C/W
Junction and Storage Temperature TJ, Tstg 55 to
150
°C
1. FR-4 Minimum Pad.
2. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
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SOD323
CASE 477
STYLE 1
MARKING DIAGRAM
1
CATHODE
2
ANODE
A6 = Specific Device Code
M = Date Code
Device Package Shipping
ORDERING INFORMATION
BAS16HT1G SOD323
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
A6 M
SBAS16HT1G SOD323
(PbFree)
3000 /T ape & Reel
BAS16HT3G SOD323
(PbFree)
10000 / Tape & Reel
SBAS16HT3G SOD323
(PbFree)
10000 / Tape & Reel
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BAS16H
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
IR
1.0
50
30
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR) 100 Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
715
855
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD2.0 pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR 1.75 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
trr 6.0 ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)
QS45 pC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 W
0.1 mF
D.U.T.
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS16H
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3
TYPICAL CHARACTERISTICS
100
0.2 0.4
VF
, FORWARD VOLTAGE (V)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (V)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
TA = -40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
Figure 5. Maximum Nonrepetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
tp (mSec)
10.10.010.001
0
5
10
15
20
25
IFSM (A)
10
30
35
40
Based on square wave currents
TJ = 25°C prior to surge
0.0001 100 1000
a a e Mademavk: no Semxcundmflm Cnmpnnems In nuns \ghhlnanumhermpalems \rademavk: m 0.83 www mm cummle‘gdflFalem Mavkmg gm
BAS16H
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4
PACKAGE DIMENSIONS
HE
SOD323
CASE 47702
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
NOTE 3
D
12
bE
A3
A1
A
CNOTE 5
L
1.60
0.063
0.63
0.025
0.83
0.033
2.85
0.112
HE
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b0.25 0.32 0.4
C0.089 0.12 0.177
D1.60 1.70 1.80
E1.15 1.25 1.35
0.08
2.30 2.50 2.70
L
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN NOM MAX
INCHES
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
BAS16HT1/D
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