SI2309CDS Datasheet by Vishay Siliconix

View All Related Products | Download PDF Datasheet
— VISHAYm V
Vishay Siliconix
Si2309CDS
New Product
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
FEATURES
Halogen-free Option Available
TrenchFET® Power MOSFET
APPLICATIONS
Load Switch
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)dQg (Typ.)
- 60 0.345 at VGS = - 10 V - 1.6 2.7 nC
0.450 at VGS = - 4.5 V - 1.4
Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free)
Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
* Marking Code
Si2309CDS (N9)*
S
G
D
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
d. When TC = 25 °C.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)a, b
TC = 25 °C
ID
- 1.6
A
TC = 70 °C - 1.3
TA = 25 °C - 1.2a, b
TA = 70 °C - 1.0a, b
Pulsed Drain Current (10 µs Pulse Width) IDM - 8
Single Pulse Avalanche Current L = 0.1 mH IAS - 5
Continuous Source-Drain Diode Current
TC = 25 °C IS
- 1.4
TA = 25 °C - 0.9a, b
Maximum Power Dissipation
TC = 25 °C
PD
1.7
W
TC = 70 °C 1.1
TA = 25 °C 1.0a, b
TA = 70 °C 0.67a, b
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)c260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambienta, c t 5 s RthJA 92 120 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 58 73
VISHAK
www.vishay.com
2
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
Vishay Siliconix
Si2309CDS
New Product
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V
VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 65 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 60 V, VGS = 0 V - 1 µA
VDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS 5 V, VGS = - 10 V - 6 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 1.25 A 0.285 0.345 Ω
VGS = - 4.5 V, ID = - 1.0 A 0.360 0.450
Forward Transconductanceagfs VDS = - 10 V, ID = - 1.0 A 2.8 S
Dynamicb
Input Capacitance Ciss
VDS = - 30 V, VGS = 0 V, f = 1 MHz
210
pFOutput Capacitance Coss 28
Reverse Transfer Capacitance Crss 20
Total Gate Charge Qg
VDS = - 30 V, VGS = - 4.5 V, ID = - 1.25 A
2.7 4.1
nCGate-Source Charge Qgs 0.8
Gate-Drain Charge Qgd 1.2
Gate Resistance Rgf = 1 MHz 7 Ω
Tur n - O n D e l ay Time td(on)
VDD = - 30 V, RL = 30 Ω
ID - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
40 60
ns
Rise Time tr35 55
Turn-Off Delay Time td(off) 15 25
Fall Time tf10 20
Tur n - O n D e l ay Time td(on)
VDD = - 30 V, RL = 30 Ω
ID - 1 A, VGEN = - 10 V, Rg = 1 Ω
510
Rise Time tr10 20
Turn-Off Delay Time td(off) 15 25
Fall Time tf10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 1.4 A
Pulse Diode Forward Current ISM - 8
Body Diode Voltage VSD IS = - 0.75 A, VGS = 0 V - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 1.25 A, dI/dt = 100 A/µs, TJ = 25 °C
30 60 ns
Body Diode Reverse Recovery Charge Qrr 33 60 nC
Reverse Recovery Fall Time ta18 ns
Reverse Recovery Rise Time tb12
— VISHAY. V
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
www.vishay.com
3
Vishay Siliconix
Si2309CDS
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
012345
VGS =10thru5V
VGS =3V
VGS =4V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)I D
0.0
0.2
0.4
0.6
0.8
02468
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
012345
VDS =45V
ID=1.25A
VDS =30V
VDS =15V
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
012345
TC= 25 °C
TC= 125 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)I D
Crss
0
70
140
210
280
350
0 15304560
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
ID=1.25A
VGS =4.5V
VGS =10V
TJ-Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
— VISHAY. V
www.vishay.com
4
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
Vishay Siliconix
Si2309CDS
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.00.30.60.91.21.5
1
0.01
0.001
0.1
10
100
TJ= 150 °C
TJ= - 50 °C
TJ= 25 °C
VSD -Source-to-Drain Voltage (V)
- Source Current (A)
IS
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
ID=1mA
Variance (V)VGS(th)
TJ- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0246810
TJ= 25 °C
TJ= 125 °C
ID=1.25A
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
TA= 25 °C
Safe Operating Area, Junction-to-Ambient
10
0.1
0.1 1 10
1
TA=25 °C
Single Pulse
1ms
0.01
100
100 µs
Limited byR
DS(on)*
10 µs
10 ms
100 ms
VDS - Drain-to-Source Voltage (V)
*VGS > minimumVGS at which RDS(on) is specified
- Drain Current (A)
ID
1s,10s
100 s, DC
VISHAY»
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
www.vishay.com
5
Vishay Siliconix
Si2309CDS
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68980.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA =166 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10-3 10-2 110 100010-1
10-4 100
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
0.01
1
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 73 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
— VISHAYm V
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
VISHAY ‘5 H u 0394 o 037 ‘ u ass
AN807
Vishay Siliconix
Document Number: 70739
26-Nov-03
www.vishay.com
1
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
ambient air. This pattern uses all the available area underneath the
body for this purpose.
FIGURE 1. Footprint With Copper Spreading
0.114
2.9
0.059
1.5
0.0394
1.0
0.037
0.95
0.150
3.8
0.081
2.05
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
— VISHAY.. RECOMMENDED MINIMUM PADS FOR SOT- mos (2 692) Recammended Mlmmum Pads Dimensmns m \nchesr‘(mm} Docq'vve'n Number 72609
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
Return to Index
Return to Index
— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Products related to this Datasheet

MOSFET P-CH 60V 1.6A SOT23-3
MOSFET P-CH 60V 1.6A SOT23-3
MOSFET P-CH 60V 1.6A SOT23-3
MOSFET P-CH 60V 1.6A SOT23-3
MOSFET P-CH 60V 1.6A SOT23-3
MOSFET P-CH 60V 1.6A SOT23-3