BYV26x Datasheet by Vishay Semiconductor Diodes Division

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BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com Vishay Semiconductors
Rev. 1.8, 21-Feb-18 1Document Number: 86040
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra-Fast Avalanche Sinterglass Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
Glass passivated junction
Hermetically sealed package
Very low switching losses
Low reverse current
High reverse voltage
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Switched mode power supplies
High-frequency inverter circuits
949539
click logo to get started
Available
Models
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYV26E BYV26E-TR 5000 per 10" tape and reel 25 000
BYV26E BYV26E-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV26A VR = 200 V; IF(AV) = 1 A SOD-57
BYV26B VR = 400 V; IF(AV) = 1 A SOD-57
BYV26C VR = 600 V; IF(AV) = 1 A SOD-57
BYV26D VR = 800 V; IF(AV) = 1 A SOD-57
BYV26E VR = 1000 V; IF(AV) = 1 A SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage See electrical characteristics
BYV26A VR = VRRM 200 V
BYV26B VR = VRRM 400 V
BYV26C VR = VRRM 600 V
BYV26D VR = VRRM 800 V
BYV26E VR = VRRM 1000 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 30 A
Average forward current IF(AV) 1A
Non repetitive reverse avalanche energy I(BR)R = 1 A, inductive load ER10 mJ
Junction and storage temperature range Tj = Tstg -55 to +175 °C
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BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com Vishay Semiconductors
Rev. 1.8, 21-Feb-18 2Document Number: 86040
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient l = 10 mm, TL = constant RthJA 45 K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A VF--2.5V
IF = 1 A, Tj = 175 °C VF--1.3V
Reverse current VR = VRRM IR--5μA
VR = VRRM, Tj = 150 °C IR- - 100 μA
Reverse breakdown voltage IR = 100 μA
BYV26A V(BR)R 300 - - V
BYV26B V(BR)R 500 - - V
BYV26C V(BR)R 700 - - V
BYV26D V(BR)R 900 - - V
BYV26E V(BR)R 1100 - - V
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A
BYV26A trr - - 30 ns
BYV26B trr - - 30 ns
BYV26C trr - - 30 ns
BYV26D trr - - 75 ns
BYV26E trr - - 75 ns
04080120160
0
100
200
300
400
600
PR - Max. Reverse Power Dissipation (mW)
Tj - Junction Temperature (°C)
200
959728
500
VR = VRRM
200 V
1000 V
400 V
600 V
800 V
RthJA = 45 K/W
RthJA = 100 K/W
04080120160
200
959729
1
10
100
1000
IR - Reverse Current (μA)
Tj - Junction Temperature (°C)
VR = VRRM
0.1
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BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com Vishay Semiconductors
Rev. 1.8, 21-Feb-18 3Document Number: 86040
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
04080120160
0
0.2
0.4
0.6
0.8
1.2
T
amb
- Ambient Temperature (°C)
200
959730
1.0
RthJA = 45 K/W
I
FAV
- Average Forward Current (A)
RthJA = 100 K/W
0.001
0.01
0.1
1
10
959731
IF - Forward Current (A)
VF - Forward Voltage (V)
Tj = 175 °C
10234567
Tj = 25 °C
0
5
10
15
20
25
30
35
40
16380
f = 1 MHz
BYV26C
0.1 1 10 100
V
R
- Reverse Voltage (V)
C
D
- DiodeCapacitance (pF)
16381
f = 1 MHz
BYV26E
0
5
10
15
20
25
30
35
40
0.1 1 10 100
VR - Reverse Voltage (V)
CD - Diode Capacitance (pF)
20543
3.6 (0.142) max.
26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
0.82 (0.032) max.
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Revision: 08-Feb-17 1Document Number: 91000
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