BSZ086P03NS3E G Datasheet by Infineon Technologies

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(ifineon :7 (GE Halogen-Free Packing 086F3NE non-dry n
BSZ086P03NS3E G
OptiMOSTM P3 Power-Transistor
Features
• single P-Channel in S3O8
• Qualified according JEDEC1) for target applications
• 150 °C operating temperature
VGS=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD protected
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
PG-TSDSON-8 086P3NE
PG-TSDSON-8
VDS -30 V
RDS(on),max 8.6 mΩ
ID-40 A
Product Summary
BSZ086P03NS3E G
PackageType Marking Lead free Packing
Yes non-dry
Halogen free
Yes
Rev. 2.03 page 1 2012-04-13
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=70 °C
TA=25 °C2)
Pulsed drain current ID,pulse TC=25 °C3)
Avalanche energy, single pulse EAS ID=-20 A, RGS=25 ΩmJ
Gate source voltage VGS V
Power dissipation Ptot TA=25 °C W
TA=25 °C2)
Operating and storage temperature Tj, Tstg °C
ESD class JESD22-A114 HBM
Soldering temperature °C
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
-13.5
69
260
Value
105
-160
-40
-40
3 (>= 4 kV)
55/150/56
-55 … 150
±25
2.1
Rev. 2.03 page 1 2012-04-13
@neon VDs=-30 V, V55=0 V,
BSZ086P03NS3E G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - case RthJC - - 1.8 K/W
Thermal resistance,
junction - ambient RthJA 6 cm2 cooling area2) --60
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=-250μA-30 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=-105 µA -3.1 -2.5 -1.9
Zero gate voltage drain current IDSS
VDS=-30 V, VGS=0 V,
Tj=25 °C - - -1 µA
V
DS=-30 V,
V
GS=0 V,
10
Values
Rev. 2.03 page 2 2012-04-13
DS
,
GS
,
Tj=125 °C - - -10
Gate-source leakage current IGSS VGS=-25 V, VDS=0 V - - -10 µA
Drain-source on-state resistance RDS(on) VGS=-6 V, ID=-20 A - 8.7 13.4 mΩ
VGS=-10 V, ID=-20 A - 6.5 8.6
Gate resistance RG- 2.2 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=-20 A 30 43 - S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Fig. 3 for more detailed information
Rev. 2.03 page 2 2012-04-13
@neon
BSZ086P03NS3E G
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss - 3190 4785 pF
Output capacitance Coss - 1520 2280
Reverse transfer capacitance Crss - 110 165
Turn-on delay time td(on) -1624ns
Rise time tr-4669
Turn-off delay time td(off) -3553
Fall time tf-812
Gate Char
e Characteristics3)
Gate to source charge Qgs - 16.1 21.4 nC
Gate charge at threshold Qg(th) - 5.0 6.7
Gate to drain charge Qgd - 7.4 11.1
Switching charge Qsw - 18.4 25.7
Values
VGS=0 V, VDS=-15 V,
f=1 MHz
VDD=-15 V, VGS=-
10 V, ID=-20 A,
RG=6 Ω
VDD=-15 V, ID=20 A,
VGS=0 to -10 V
Rev. 2.03 page 3 2012-04-13
Gate charge total Qg- 43.2 57.5
Gate plateau voltage Vplateau - -4.5 - V
Output charge Qoss VDD=-15 V, VGS=0 V - 34.9 46.4 nC
Reverse Diode
Diode continous forward current IS- - 40 A
Diode pulse current IS,pulse - - 160
Diode forward voltage VSD
VGS=0 V, IF=-40 A,
Tj=25 °C - - -1.1 V
Reverse recovery time trr
VR=15 V, IF=|IS|,
diF/dt=100 A/µs -39-ns
Reverse recovery charge Qrr -34-nC
TC=25 °C
Rev. 2.03 page 3 2012-04-13
BSZ086P03NS3E G
1 Power dissipation 2 Drain current
Ptot=f(TC); tp10 s ID=f(TC); |VGS|10 V; tp10 s
0
10
20
30
40
50
60
70
80
0 40 80 120 160
Ptot [W]
TC[°C]
0
4
8
12
16
20
24
28
32
36
40
44
48
0 40 80 120 160
-ID[A]
TC[°C]
Rev. 2.03 page 4 2012-04-13
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C1); D=0 ZthJS=f(tp)
parameter: tpparameter: D=tp/T
1 µs
100 µs
1 ms
10 ms
DC
10-1 100101102
10-2
10-1
100
101
102
0.01
0.1
1
10
100
1000
0.1 110 100
-ID[A]
-VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
101
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0. 1 1 10
ZthJS [K/W]
tp[s]
0
10
20
30
40
50
60
70
80
0 40 80 120 160
Ptot [W]
TC[°C]
0
4
8
12
16
20
24
28
32
36
40
44
48
0 40 80 120 160
-ID[A]
TC[°C]
Rev. 2.03 page 4 2012-04-13
L:
BSZ086P03NS3E G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
-4.0 V
-4.5 V
-5.0 V
-6 V
-10 V
0
5
10
15
20
25
30
35
40
010203040
RDS(on) [mΩ]
-ID[A]
-3.5 V
-3.7 V
-4.0 V
-4.2V
-4.5 V
-5.0 V
-10 V
0
10
20
30
40
0123
-ID[A]
-VDS [V]
Rev. 2.03 page 5 2012-04-13
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
-4.0 V
-4.5 V
-5.0 V
-6 V
-10 V
0
5
10
15
20
25
30
35
40
010203040
RDS(on) [mΩ]
-ID[A]
25 °C
150 °C
0
10
20
30
40
50
60
0123456
-ID[A]
-VGS [V]
0
20
40
60
0102030
gfs [S]
-ID[A]
-3.5 V
-3.7 V
-4.0 V
-4.2V
-4.5 V
-5.0 V
-10 V
0
10
20
30
40
0123
-ID[A]
-VDS [V]
Rev. 2.03 page 5 2012-04-13
BSZ086P03NS3E G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-20 A; VGS=-10 V VGS(th)=f(Tj); VGS=VDS; ID=-105 μA
typ.
98 %
4
6
8
10
12
-60 -20 20 60 100 140 180
RDS(on) [mΩ]
Tj[°C]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
-VGS(th) [V]
Tj[°C]
Rev. 2.03 page 6 2012-04-13
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
4
6
8
10
12
-60 -20 20 60 100 140 180
RDS(on) [mΩ]
Tj[°C]
Ciss
Coss
Crss
101
102
103
104
0102030
C[pF]
-VDS [V]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
-VGS(th) [V]
Tj[°C]
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
0.1
1
10
100
00.511.5
IF[A]
-VSD [V]
Rev. 2.03 page 6 2012-04-13
(ifineon §\\ § /// /
BSZ086P03NS3E G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=-20 A pulsed
parameter: Tj(start) parameter: VDD
-6 V
-15 V
-24 V
0
1
2
3
4
5
6
7
8
02040
-VGS [V]
-Qgate [nC]
25 °C
100 °C
125 °C
100101102103
100
101
102
-IAV [A]
tAV [µs]
Rev. 2.03 page 7 2012-04-13
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=-250 μA
-6 V
-15 V
-24 V
0
1
2
3
4
5
6
7
8
02040
-VGS [V]
-Qgate [nC]
26
28
30
32
34
36
-60 -20 20 60 100 140 180
-VBR(DSS) [V]
Tj[°C]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
100101102103
100
101
102
-IAV [A]
tAV [µs]
Rev. 2.03 page 7 2012-04-13
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BSZ086P03NS3E G
Package Outline
PG-TSDSON-8
Rev. 2.03 page 8 2012-04-13
Dimensions in mm
Rev. 2.03 page 8 2012-04-13
(ifineon www.infineon.com ).
BSZ086P03NS3E G
Published by
Rev. 2.03 page 9 2012-04-13
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.03 page 9 2012-04-13

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