ES1A thru ES1D Datasheet by Vishay Semiconductor Diodes Division

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VISHAY. www vushay com/doc799912 ® RoHS cowumr HALOGEN FREE DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEuvogemushauom www.v\shay.com/doc?91000
ES1A, ES1B, ES1C, ES1D
www.vishay.com Vishay General Semiconductor
Revision: 21-Jul-17 1Document Number: 88586
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated pellet chip junction
Ultrafast recovery times for high efficiency
Low forward voltage, low power losses
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified available
- Automotive ordering code: P/NHE3 or P/NHM3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V, 100 V, 150 V, 200 V
IFSM 30 A
trr 15 ns
VF at IF0.92 V
TJ max. 150 °C
Package SMA (DO-214AC)
Diode variations Single
SMA (DO-214AC)
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES1A ES1B ES1C ES1D UNIT
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 30 A
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
VISHAY. DwodesAmencas@\/wshay.com DwodesAswamwshaymm DwodesEuvogtevlshayLom www.v\shay,com/doc?91000
ES1A, ES1B, ES1C, ES1D
www.vishay.com Vishay General Semiconductor
Revision: 21-Jul-17 2Document Number: 88586
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage IF = 0.6 A VF (1) 0.865 V
IF = 1.0 A VF0.920
Maximum DC reverse current at rated DC
blocking voltage
TA = 25 °C IR
5.0 μA
TA = 100 °C 100
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A trr 15 ns
Maximum reverse recovery time IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs,
Irr = 10 % IRM
TJ = 25 °C trr
25 ns
TJ = 100 °C 35
Maximum stored charge IF = 0.6 A, VR = 30 V, dI/dt = 50 A/μs,
Irr = 10 % IRM
TJ = 25 °C Qrr
10 nC
TJ = 100 °C 25
Typical junction capacitance 4.0 V, 1 MHz CJ10 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES1A ES1B ES1C ES1D UNIT
Typical thermal resistance RθJA (1) 85 °C/W
RθJL (1) 35
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
ES1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
ES1DHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel
ES1DHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel
ES1D-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel
ES1D-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
ES1DHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel
ES1DHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel
VISHAY. DwodesAmencasmwshaywm DwodesAswa@wshay,com DwodesEuvogemusnauom www.v\shay,com/doc?91000
ES1A, ES1B, ES1C, ES1D
www.vishay.com Vishay General Semiconductor
Revision: 21-Jul-17 3Document Number: 88586
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Thermal Impedance
0
1.2
80 90 100 110 120 130 140 150
0.8
1.0
0.2
0.4
0.6
Average Forward Rectified Current (A)
Lead Temperature (°C)
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
110 100
5
10
15
20
25
30
0
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
10
1
0.1
0.01
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
0 20406080100
1000
100
10
1
0.1
Instantaneous Reverse Leakage
Current (µA)
T
J
= 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
14
12
10
8
6
4
2
0
0.1 1 10 100
Mounted on 0.2" x 0.2" (5 mm x 7 mm)
Copper Pad Areas
100
10
1
0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
VISHAY. DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
ES1A, ES1B, ES1C, ES1D
www.vishay.com Vishay General Semiconductor
Revision: 21-Jul-17 4Document Number: 88586
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
SMA (DO-214AC)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
— VISHAY. V
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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