Si1022R Datasheet by Vishay Siliconix

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Vishay Siliconix
Si1022R
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
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1
N-Channel 60 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFETs
Low On-Resistance: 1.25
Low Threshold: 2.5 V
Low Input Capacitance: 30 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
Miniature Package
ESD Protected: 2000 V
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Battery Operated Systems
Solid State Relays
BENEFITS
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Small Board Area
PRODUCT SUMMARY
VDS(min.) (V) RDS(on) ()V
GS(th) (V) ID (mA)
60 1.25 at VGS = 10 V 1 to 2.5 330
Notes:
a. Surface mounted on FR4 board, power applied for t 10 s.
Marking Code: E
SC-75A
(SOT-416)
1
2
3
G
S
D
Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain CurrentaTA = 25 °C ID
330
mA
TA = 85 °C 240
Pulsed Drain Currenta IDM 650
Power Dissipationa
TA = 25 °C PD
250 mW
TA = 85 °C 130
Thermal Resistance, Maximum Junction-to-AmbientaRthJA 500 °C/W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
(TJ — VISHAYa V
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Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
Vishay Siliconix
Si1022R
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 60 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 12.5
Gate-Body Leakage IGSS
VDS = 0 V, VGS = ± 10 V ± 150
nA
TJ = 85 °C ± 500
VDS = 0 V, VGS = ± 5 V ± 20
Zero Gate Voltage Drain Current IDSS
VDS = 50 V, VGS = 0 V 10
TJ = 85 °C 100
VDS = 60 V, VGS = 0 V A
On-State Drain CurrentaID(on) VDS = 10 V, VGS = 4.5 V 500 mA
VDS = 7.5 V, VGS = 10 V 800
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 200 mA 3.0
TJ = 125 °C 5.0
VGS = 10 V, ID = 500 mA 1.25
TJ = 125 °C 2.25
Forward Transconductanceagfs VDS = 10 V, ID = 200 mA 100 mS
Diode Forward VoltageaVSD VGS = 0 V, IS = 200 mA 1.3 V
Dynamicb
Input Capacitance Ciss
VDS = 25 V, VGS = 0 V, f = 1 MHz
30
pFOutput Capacitance Coss 6
Reverse Transfer Capacitance Crss 2.5
Gate Charge Qg V
DS = 10 V, ID = 250 mA, VGS = 4.5 V 0.6 nC
Switchingb, c
Tur n - On T im e t(on) VDD = 30 V, RL = 150 ,
ID = 200 mA, VGEN = 10 V, Rg = 10
25 ns
Turn-Off Time t(off) 35
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Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
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Vishay Siliconix
Si1022R
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1.0
012345
VDS
- Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS = 10 V thru 7 V
3 V
5 V
4 V
6 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 200 400 600 800 1000
ID
- Drain Current (mA)
VGS = 4.5 V
VGS = 10 V
- On-Resistance (Ω)RDS(on)
0
1
2
3
4
5
6
7
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VDS = 10 V
ID = 250 mA
- Gate-to-Source Voltage (V)
Qg
- Total Gate Charge (nC)
VGS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
300
600
900
1200
0123456
VGS
- Gate-to-Source Voltage (V)
- Drain Current (mA)ID
TJ = - 55 °C
125 °C
25 °C
0
10
20
30
40
50
0510152025
VDS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
Crss
Coss
Ciss
VGS = 0 V
f = 1 MHz
0.0
0.4
0.8
1.2
1.6
2.0
- 50 - 25 0 25 50 75 100 125 150
TJ
- Junction Temperature (°C)
VGS = 10 V at 500 mA
VGS = 4.5 V
at 200 mA
(Normalized)
- On-ResistanceRDS(on)
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Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
Vishay Siliconix
Si1022R
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71331.
Source-Drain Diode Forward Voltage
Threshold Voltage Variance Over Temperature
1.2 1.5
1
100
1000
0 0.3 0.6 0.9
TJ = 25 °C
TJ = 125 °C
VSD
- Source-to-Drain Voltage (V)
- Source Current (A)IS
10
TJ = - 55 °C
VGS = 0 V
On-Resistance vs. Gate-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
1
2
3
4
5
0246810
VGS - Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
- On-Resistance (Ω)RDS(on)
0.01
0
1
2.5
3
100 6000.1
Power (W)
Time (s)
1.5
2
0.5
1
10
TA = 25 °C
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 00601110-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 500 °C/W
3. TJM - T A
= PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
VISHAY. Dwm LE: Wm pmosmcnsuggomiwshaymm www.v\shay,com/doc?91000
Package Information
www.vishay.com Vishay Siliconix
C15-1445-Rev. F, 23-Nov-15 1Document Number: 71348
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-75A: 3 Leads
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C
MBA –
2X
1 2
3
A
1
2
D
C
bbb
4
B
3
D
3
D
D
Dbbb
D
bbb
D
e2
B1(b1)
3
e1
2XB1
E1
2X
e3
2
E
E/2
D
bbb
4X
D
Seating Plane
A
A2
A1
Base Metal
With Tin Planting
Section B-B 5
B1
b1
C
c1
L2
L
L1
B
B
2X
1
ddd
C
C
1
1
DIMENSIONS TOLERANCES
aaa 0.10
bbb 0.10
ccc 0.10
ddd 0.10
DIM. MILLIMETERS NOTE
MIN. NOM. MAX.
A- -0.80
A1 0.00 - 0.10
A2 0.65 0.70 0.80
B1 0.19 - 0.24 5
b1 0.17 - 0.21
c0.13-0.155
c1 0.10 - 0.12 5
D 1.48 1.575 1.68 1, 2
E 1.50 1.60 1.70
E1 0.66 0.76 0.86 1, 2
e1 0.50 BSC
e2 1.00 BSC
e3 0.50 BSC
L 0.15 0.205 0.30
L1 0.40 ref.
L2 0.15 BSC
q0°-8°
q1 4° - 10°
— VISHAY.. 0.071 n m) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) a) com 19 'J'vve'n Number 72603 won 217 dwrca
Application Note 826
Vishay Siliconix
Document Number: 72603 www.vishay.com
Revision: 21-Jan-08 19
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead
0.014
(0.356)
0.071
(1.803)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.264
(0.660)
0.054
(1.372)
0.031
(0.798)
0.020
(0.503)
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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