SL04 Datasheet by Vishay Semiconductor Diodes Division

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— VISHAY. V <1” smf="" (no-219m)="" 3d="" ls="" ab‘e="" :="" “mam;="" ®="" rohs="" cowum="" www="" ishay.com/doc?99912="" dwodesamencas©wshay£om="" dwodesaswa©wshay£om="" dwodeseuvogemushauom="" www.v\shay.com/doc?91000="">
SL04
www.vishay.com Vishay Semiconductors
Rev. 1.3, 28-Mar-18 1Document Number: 85942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier Surface Mount
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SMF (DO-219AB)
Polarity: color band denotes cathode end
Weight: approx. 15 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 50K/box
08/3K per 7" reel (8 mm tape), 30K/box
Circuit configuration: single
FEATURES
For surface mounted applications
Low-profile package
Ideal for automated placement
Low power loss, high efficiency
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Meets JESD 201 class 2 whisker test
Wave and reflow solderable
AEC-Q101 qualified available
Base P/N-E3 - RoHS-compliant, and commercial grade
Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
Note
(1) Mounted on epoxy substrate with 3 mm x 3 mm Cu pads ( 40 μm thick)
12
23020
eSMP® Series
SMF (DO-219AB)
23019
click logo to get started
Available
Models
Available
PARTS TABLE
PART ORDERING CODE MARKING REMARKS
SL04 SL04-E3-18 or SL04-E3-08
SL04-HE3-18 or SL04-HE3-08 S4 Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage VRRM 40 V
Maximum average forward rectified current (fig. 4) IF(AV) 1.1 A
Peak forward surge current 8.3 ms single half sine-wave
TJ(init) = 25 °C IFSM 40 A
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to lead RthJL 22 K/W
Thermal resistance junction to ambient air (1) RthJA 180 K/W
Junction temperature in DC forward current without reverse bias Tj175 °C
Storage temperature range Tstg -55 to +175 °C
VISHAY. DwodesAmencas©wshay£om DwodesAswa@wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
SL04
www.vishay.com Vishay Semiconductors
Rev. 1.3, 28-Mar-18 2Document Number: 85942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Typical Forward Characteristics
Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage
Fig. 3 - Typical Reverse Characteristics
Fig. 4 - Forward Current Derating Curve
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
IF = 0.5 A TJ = 25 °C
VF (1)
0.41 0.47
V
IF = 1.1 A 0.48 0.54
IF = 0.5 A TJ = 100 °C 0.34 -
IF = 1.1 A 0.43 -
IF = 0.5 A TJ = 125 °C 0.31 -
IF = 1.1 A 0.42 -
Reverse current VR = 40 V
TJ = 25 °C
IR
10 20 μA
TJ = 100 °C 1.2 2.6 mA
TJ = 125 °C 4.5 13 mA
Typical junction capacitance VR = 4.0 V, 1 MHz CD65 - pF
0.001
0.01
0.1
1
10
0.00 0.20 0.40 0.60 0.80 1.00 1.20
IF[A]
V
F
[V]
typical at 25 °C
typical at 100 °C
typical at 125 °C
typical at 150 °C
0
20
40
60
80
100
120
140
160
180
200
0.1 1 10 100
CD[pF]
VR[V]
f = 1 MHz
100.0E-9
1.0E-6
10.0E-6
100.0E-6
1.0E-3
10.0E-3
100.0E-3
1.0E+0
010203040
IR[A]
VR[V]
TJ at 25 °C TJ at 75 °C
TJ at 100 °C TJ at 125 °C
TJ at 150 °C TJ at 175 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150 175
Average Forward Current [A]
Lead Temperature (°C)
RthJL = 22K/W
RthJA = 180K/W
VISHAY. DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEuvogemushauom www.v\shay.CUm/doc?91000
SL04
www.vishay.com Vishay Semiconductors
Rev. 1.3, 28-Mar-18 3Document Number: 85942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Transient Thermal Impedance
PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB)
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Transient Thermal Impedance [K/W]
t-Pulse Duration [s]
RthJL
RthJA (Pad 3 mm x 3 mm)
Foot print recommendation:
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
1.4 (0.055)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.85 (0.033)
0.35 (0.014)
1.2 (0.047)
0.8 (0.031)
1.9 (0.075)
1.7 (0.067)
1.08 (0.043)
0.88 (0.035)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
0 (0.000)
5
5
Created - Date: 15. February 2005
17247
Detail Z
enlarged
VISHAY. «--\------«\Wwwwwvxwwxwww ‘KO Mar A0 BO K0 W T P0 P2 P1 D0 D1 E F 19 L0 15 80 0235 L0 20 L0 15 1 175 35 DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEuvogemushauom www.v\shay.com/doc?91000
SL04
www.vishay.com Vishay Semiconductors
Rev. 1.3, 28-Mar-18 4Document Number: 85942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BLISTER TAPE DIMENSIONS in millimeters: SMF (DO-219AB)
18513
PS
Document-No.: S8-V-3717.02-001 (3)
VISHAY. DwodesAmencasw/wshayxom DwodesAswaviwshaywm DwodesEuvogemusnauom www.v\shay,com/doc?91000
SL04
www.vishay.com Vishay Semiconductors
Rev. 1.3, 28-Mar-18 5Document Number: 85942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORIENTATION IN CARRIER TAPE - SMF
SMF
Top view
cathode
Unreeling direction
22670
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
— VISHAY. V
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Revision: 08-Feb-17 1Document Number: 91000
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