NRVBB1060, NRVBB1060W1 Datasheet by ON Semiconductor
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© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 3 1Publication Order Number:
NRVBB1060/D
NRVBB1060,
NRVBB1060W1
Switch-mode Power
Rectifier
This switch−mode power rectifier uses the Schottky Barrier
principle with a platinum barrier metal. This state−of−the−art device
has the following features:
Features
•Low Forward Voltage
•175°C Operating Junction Temperature
•Low Power Loss/High Efficiency
•High Surge Capacity
•For Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
•This is a Pb−Free Device
Applications
•Power Supply − Output Rectification
•Power Management
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Weight: 1.7 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 60 VOLTS
Device Package Shipping†
ORDERING INFORMATION
NRVBB1060T4G D2PAK
(Pb−Free)
800/Tape & Ree
l
www.onsemi.com
1
3
4
D2PAK
CASE 418B
STYLE 3, 6
3
4
1
MARKING DIAGRAMS
B1060G
x K A
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
xKA = Diode Polarity
x = N or A
AY WW
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
STYLE 6
1
3
4
STYLE 3
NRVBB1060W1T4G D2PAK
(Pb−Free)
800/Tape & Ree
l
1060W1G
x K A
AY WW
NRVBB1060 NRVBB1060W1
NRVBB1060, NRVBB1060W1
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 V
Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
IFRM 20 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A
Operating Junction Temperature (Note 1) TJ*65 to +175 °C
Storage Temperature Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF0.7
0.8
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR25
0.10
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
SQUARE WAVE
Maw “9
IMAM: 5,1:
\PK/I,‘V : w
IpK/‘AV : 20
name
IpK/m : 5
WW : m
SQUARE WAVE
IpK/m : n
NRVBB1060, NRVBB1060W1
www.onsemi.com
3
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
Figure 3. Current Derating, Case Figure 4. Typical Capacitance
Figure 5. Typical Forward Power Dissipation
0.60
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
10
VR, REVERSE VOLTAGE (VOLTS)
0
110
TC, CASE TEMPERATURE (°C)
14
6.0
8.0
0
VR, REVERSE VOLTAGE (V)
50
1000
800
600
300
0
10
2.0 4.00
IF(AV), AVERAGE CURRENT (AMPS)
10
4.0
3.0
2.0
1.0
0
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
I
0.2 0.4 0.8 10 20 30 40
0.1
1.0
120 130 140 150 15 20 40
P
5.0 156.0
7.0
1.0
0.1
1.0
, REVERSE CURRENT (mA)
R
10
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
1.0 7.0 8.0 9.0
5.0
6.0
SQUARE WAVE
TJ = 25°C
150°C
TJ = 150°C
125°C
85°C
0.01
25°C
12
10
16
20
18 900
700
500
400
25 30 35
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
RqJC = 2°C/W
TJ = 25°C
f = 1 MHz
SQUARE WAVE
dc
TJ = 85°C
125°C
85°C
0.50.1 0.3 0.7 0.9 50 60
180
2.0
4.0
100
200
45 50
9.0
8.0 IPK/IAV = p
IPK/IAV = 5.0
IPK/IAV = 10
IPK/IAV = 20
1.1 1.2 0.001
100
160 170
dc
C, CAPACITANCE (pF)
10 11 12 13 14
Figure 6. Typical Forward Power Dissipation
2.0 4.00
IF(AV), AVERAGE CURRENT (AMPS)
10
4.0
3.0
2.0
1.0
0
3.0
P
5.0 156.0
7.0
1.0 7.0 8.0 9.0
5.0
6.0
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
SQUARE WAVE
dc
TJ = 150°C
9.0
8.0
IPK/IAV = p
IPK/IAV = 5.0
IPK/IAV = 10
IPK/IAV = 20
10 11 12 13 14
NRVBB1060, NRVBB1060W1
www.onsemi.com
5
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 6:
PIN 1. NO CONNECT
2. CATHODE
3. ANODE
4. CATHODE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
5.080
DIMENSIONS: MILLIMETERS
PITCH
2X
16.155
1.016
2X
10.49
3.504
owns the Hng tn a num
NRVBB1060, NRVBB1060W1
www.onsemi.com
6
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NRVBB1060/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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