BSC120N03MS G Datasheet by Infineon Technologies

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@neon, RoHS / «E Halogen-Free mmwm J-STDZO and JESD22
BSC120N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOMSW for High Frequency SMPS
• 100% Avalanche tested
• N-channel
• Very low on-resistance RDS(on) @ VGS=4.5 V
• Excellent gate charge x RDS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDVGS=10 V, TC=25 °C 39 A
VGS=10 V, TC=100 °C 24
VGS=4.5 V, TC=25 °C 36
VGS=4.5 V,
TC=100 °C
23
VGS=4.5 V, TA=25 °C,
RthJA=50 K/W2)
11
Pulsed drain current3) ID,pulse TC=25 °C 156
Avalanche current, single pulse4) IAS TC=25 °C 35
Avalanche energy, single pulse
EAS ID=25 A, RGS=25 W10 mJ
Gate source voltage
VGS ±20 V
Value
1) J-STD20 and JESD22
PG-TDSON-8
Type
Package
Marking
PG-TDSON-8
120N03MS
VDS
30
V
RDS(on),max
VGS=10 V
12
mW
VGS=4.5 V
14
ID
39
A
Product Summary
Rev. 2.1 page 1 2013-05-21
@neon
BSC120N03MS G
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation
Ptot TC=25 °C 28 W
TA=25 °C,
RthJA=50 K/W2)
2.5
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC bottom - - 4.5 K/W
top - - 20
Device on PCB
RthJA 6 cm2 cooling area2) - - 50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=1 mA 30 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=250 µA 1 - 2
Zero gate voltage drain current
IDSS
VDS=30 V, VGS=0 V,
Tj=25 °C
-0.1 1µA
VDS=30 V, VGS=0 V,
Tj=125 °C
-10 100
Gate-source leakage current
IGSS VGS=16 V, VDS=0 V -10 100 nA
Drain-source on-state resistance
RDS(on) VGS=4.5 V, ID=20 A -12.5 14 mW
VGS=10 V, ID=30 A -10.0 12.0
Gate resistance
RG0.4 0.9 1.6 W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=30 A
25 50 - S
3) See figure 3 for more detailed information
Value
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1 page 2 2013-05-21
@neon Gale Charge Characteristics Reverse Diode See hgure 13 for more delafled mformation
BSC120N03MS G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -1100 1500 pF
Output capacitance
Coss -390 520
Reverse transfer capacitance
Crss -24 -
Turn-on delay time
td(on) -7.9 -ns
Rise time
tr-4.4 -
Turn-off delay time
td(off) -7.0 -
Fall time
tf-5.0 -
Gate Charge Characteristics5)
Gate to source charge
Qgs -3.8 5.1 nC
Gate charge at threshold
Qg(th) -1.8 2.4
Gate to drain charge
Qgd -1.7 2.9
Switching charge
Qsw -3.7 5.5
Gate charge total
Qg-7.2 10
Gate plateau voltage
Vplateau -3.3 - V
Gate charge total
Qg
VDD=15 V, ID=30 A,
VGS=0 to 10 V
-15 20
Gate charge total, sync. FET
Qg(sync)
VDS=0.1 V,
VGS=0 to 4.5 V
-6.2 8.3 nC
Output charge
Qoss VDD=15 V, VGS=0 V -10 14
Reverse Diode
Diode continuous forward current IS- - 25 A
Diode pulse current
IS,pulse - - 156
Diode forward voltage
VSD
VGS=0 V, IF=30 A,
Tj=25 °C
-0.92 1.1 V
Reverse recovery charge
Qrr
VR=15 V, IF=IS,
diF/dt=400 A/µs
- - 10 nC
5) See figure 16 for gate charge parameter definition
4) See figure 13 for more detailed information
TC=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=15 V, VGS=4.5 V,
ID=30 A, RG,ext=1.6 W
VDD=15 V, ID=30 A,
VGS=0 to 4.5 V
Rev. 2.1 page 3 2013-05-21
@neon
BSC120N03MS G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC)
parameter: VGS
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
10-1
100
101
102
103
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-6
10-5
10-4
10-3
10-2
10-1
100
0.01
0.1
1
10
0 0 0 0 0 0 1
ZthJC [K/W]
tp [s]
0
10
20
30
0 40 80 120 160
Ptot [W]
TCC]
10 V
4.5 V
0
10
20
30
40
0 40 80 120 160
ID [A]
TCC]
Rev. 2.1 page 4 2013-05-21
BSC120N03MS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
6 V
10 V
0
4
8
12
16
20
24
0 10 20 30 40 50
RDS(on) [mW]
ID [A]
25 °C
150 °C
0
20
40
60
80
100
0 1 2 3 4 5
ID [A]
VGS [V]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
30
60
90
120
150
0 1 2 3
ID [A]
VDS [V]
0
20
40
60
80
100
120
0 40 80 120 160
gfs [S]
ID [A]
Rev. 2.1 page 5 2013-05-21
E
BSC120N03MS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
4
8
12
16
20
-60 -20 20 60 100 140 180
RDS(on) [mW]
TjC]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
VGS(th) [V]
TjC]
Ciss
Coss
Crss
100
101
102
103
104
0 10 20 30
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
IF [A]
VSD [V]
Rev. 2.1 page 6 2013-05-21
BSC120N03MS G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=30 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20
22
24
26
28
30
32
34
-60 -20 20 60 100 140 180
VBR(DSS) [V]
TjC]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
IAV [A]
tAV [µs]
6 V
15 V
24 V
0
2
4
6
8
10
12
0 4 8 12 16
VGS [V]
Qgate [nC]
Rev. 2.1 page 7 2013-05-21
(in’aneon '1‘. 4'—‘- m b1 E1 HLLIMETERS MAX I .I0 0.50 0.22 0.35 5.49 535 4.40 6.35 6‘ I D 130 D2 E2 \1 DOCUMENT No. 283000033432 EUROPEAN PROJECTION %@ ISSUE DATE 1004-201 3 REVISlON 04
BSC120N03MS G
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
Rev. 2.1 page 8 2013-05-21
(ifineon WSW so 0:2 ”arm 00m H mm Emma; swg'a ‘ V'V “m
BSC120N03MS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.1 page 9 2013-05-21
(iFaneon , www.inlineon.com .
BSC120N03MS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1 page 10 2013-05-21

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