ROHII'I
M ) Source
12) Source
13) Source
14) Ga|e
15) Dram
16) Dram
17) Dram
1S) Dram
~1 Body Dwode
(8) (7) (6) (5)
LL
«a
iii
(1) (2) (3) (4)
liL
RQ3E180AJ
Nch 30V 18A Middle Power MOSFET Datasheet
llOutline
VDSS 30V HSMT8
RDS(on)(Max.) 4.5mΩ
ID±30A
PD2W
llInner circuit
llFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
llPackaging specifications
Type
Packing Embossed
Tape
Reel size (mm) 330
llApplication Tape width (mm) 12
Switching Basic ordering unit (pcs) 3000
Taping code TB
Marking E180AJ
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Value Unit
Drain - Source voltage VDSS 30 V
Continuous drain current Tc = 25°C ID*4 ±30 A
Ta = 25°C ID±18 A
Pulsed drain current ID,pulse*1 ±72 A
Gate - Source voltage VGSS ±12 V
Avalanche energy, single pulse EAS*2 24.6 mJ
Avalanche current IAS*2 18 A
Power dissipation PD*3 2 W
PD*4 30 W
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
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© 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.002
RQ3E180AJ Datasheet
llThermal resistance
Parameter Symbol Values Unit
Min. Typ. Max.
Thermal resistance, junction - ambient RthJA
*3 - 62.5 - ℃/W
Thermal resistance, junction - case RthJC*4 - 4.17 - ℃/W
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS VGS = 0V, ID = 1mA 30 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS
ID = 1mA - 18 - mV/℃
ΔTj referenced to 25℃
Zero gate voltage
drain current IDSS VDS = 24V, VGS = 0V - - 1 μA
Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V - - ±100 nA
Gate threshold voltage VGS(th) VDS = VGS, ID = 11mA 0.5 - 1.5 V
Gate threshold voltage
temperature coefficient
ΔVGS(th)
ID = 1mA - -2.0 - mV/℃
ΔTj referenced to 25℃
Static drain - source
on - state resistance RDS(on)*5 VGS = 4.5V, ID = 18A - 3.5 4.5 mΩ
VGS = 2.5V, ID = 18A - 4.5 5.8
Forward Transfer
Admittance |Yfs|*5 VDS = 5V, ID = 18A 24 - - S
*1 Pw ≤ 10μs, Duty cycle ≤ 1%
*2 L ⋍ 100uH, VDD = 15V, RG = 25Ω, STARTING Tch = 25℃ Fig.3-1,3-2
*3 Mounted on a ceramic boad (30×30×0.8mm)
*4 Tc=25℃
*5 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.002
RQ3E180AJ Datasheet
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 4290 -
pFOutput capacitance Coss VDS = 15V - 490 -
Reverse transfer capacitance Crss f = 1MHz - 320 -
Turn - on delay time td(on)*5 VDD ⋍ 15V,VGS = 4.5V - 28 -
ns
Rise time tr*5 ID = 9A - 22 -
Turn - off delay time td(off)*5 RL ⋍ 1.67Ω - 150 -
Fall time tf*5 RG = 10Ω - 160 -
llGate charge characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Total gate charge Qg*5 VDD ⋍ 15V,
ID = 18A,
VGS = 4.5V
- 39 -
nCGate - Source charge Qgs*5 - 10 -
Gate - Drain charge Qgd*5 - 10 -
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Body diode continuous
forward current IS*1
Ta = 25℃
- - 1.67 A
Body diode
pulse current ISP*2 - - 72 A
Forward voltage VSD*5 VGS = 0V, IS = 1.67A - - 1.2 V
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© 2015 ROHM Co., Ltd. All rights reserved. 3/11 20150730 - Rev.002
Power Dissipation : pD/pD max. [9/0]
Normalized Transient Thermal Resistance : rm
120
100
so
60
40
20 \
0
0 50 100 150
Junction Temperature : T, [“0]
10
1
0 1
n— 01
bDIIum Slnuls
0.01
RthKcnr 2 5°CIW
linden-all )-rl )XRtthh-fi)
Muunted an a celamlc [mam
[30mm x 30mm X 0.3mm
0 001
0.0001 0.01 l 100
Pulse Width : Pw [s]
200
Drain Current : ID [A]
Peak Transient Pawer : P(W)
opamllm ill ms area
is limited by Rnslallll v55: 4 5V)
I00
1D
00 Operatlon
0 1
r.:25°c
Single Pulse
Mwnted W a EBEmlE baa-v
(30mm x mm x 0 mm
0.01
01 1 I0 100
Drain - Source Voltage : V55 [V]
10000
Ta = 25°C
Single Pulse
1000
100
10
1
0.0001 001 l 100
Pulse Width : Pw[s]
RQ3E180AJ Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2015 ROHM Co., Ltd. All rights reserved. 4/11 20150730 - Rev.002
Drain Current : ID [A]
DrainRQ3E180AJ Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
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© 2015 ROHM Co., Ltd. All rights reserved. 5/11 20150730 - Rev.002
Drain Current : ID [A]
Forward Transfer Admittance : YB [S]
100
10
0'1
001
0.001
0 02 0‘4 06 08 I 12 1.4 1.6 1.5
Gate - Source Voltage : Ves [V]
100
10
T,= 125°C
01
0,01
0 001 U 01 01 1 10
Drain Current: In [A]
100
Gate Threshold Voltage : Vesrm) [V]
1.2
0.8
0.6
0.4
0.2
0
750
725 0 25 50 75 100 I25
Junction Temperature: 1" [“0]
I50
RQ3E180AJ Datasheet
llElectrical characteristic curves
Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Transconductance vs. Drain Current
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© 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150730 - Rev.002
1.5 22.53 3544.5 5
Gate - Source Voltage : V55 [V]
1
5
0
o
o 5 0 5 0 5 0 5 o 5 0
5 4 4 3 3 2 2 1 1
5:; 33m H
wocmumfiam SSWEO 850m . ESQ 2.me
=0.
5 .J
n ac.
o T:
w a / m
m ._
m m In
a
p
m m
T
n
5
2 .m V
C 5
n 4d
0 M \ .rm
Van
% _
m m M w w m 0 8 7 6 5 4 3 2 1 0
fix; .meo_ \n_ H ”Cc; 238m H
:ozwaawfi E250 ESQ 8,5231 Seiko 850m . ESQ 25w
-25 25 50 75 100 I25 150
Junction Temperature : T, [“C]
>50
RQ3E180AJ Datasheet
llElectrical characteristic curves
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
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Static Drain - Source Orr-Slate Resistance
Static Drain - Source Orr-Slate Resistance
0.1
0.1
1 1D
Drain Current: In [A]
1.: 125°C
T.= we
r]: 25“c
L: , 25‘s
I 10
Drain Current: In [A]
100
I00
Static Drain - Source Orr-Slate Resistance
I 0.1
1.: 125°C
T; 75“c
T,= 25°C
1.: . 25°C
1 10 100
Drain Current: ID [A]
RQ3E180AJ Datasheet
llElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
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© 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150730 - Rev.002
Capacitance : C [pF]
Gate - Source Voltage : V65 [V]
10000
1000
100
0.1 1 10
Drain - Source Voltage : VDS [V]
100
5 IO IS 20 25 30 35
Total Gate Charge : Qg[nC|
40
Switching Time : t [ns]
Source Current :IS [A]
10000
1000
100
10
10
0'1
001
0.01
o 1 1 10
Drain Current: ID [A]
100
0
0| 02 03 04 05 05 07 us as
Source-Drain Voltage : VSD M
1
RQ3E180AJ Datasheet
llElectrical characteristic curves
Fig.17 Typical Capacitance vs. Drain -
Source Voltage
Fig.18 Switching Characteristics
Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain
Voltage
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© 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150730 - Rev.002
Pu‘se w-dm
Vas V
as '—
D. U .T,
Re Van
90% 90%
Man! ‘ t, lam '1
an fl
v
as VDs
01
lam.) 4. DUI. Vss
VDD Gus on
charge
Vus
/’ ‘
Vmwmss
D.U.T, / ,5
R5 J; van V»)?
7L. . 2' Mews
55’ 2 L "5 Vtswtvss -Vm
RQ3E180AJ Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 AVALANCHE MEASUREMENT CIRCUIT Fig.3-2 AVALANCHE WAVEFORM
llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150730 - Rev.002
HSMTB
( 3.3X3.3 )
HD A
4—»
D ‘ >
: ‘ m 5
4—»
r—I r—I r—I r—I 4"
7 I
,.L 3
g m
E r
,4
00 L0 I_I I_I b 5 fl
4 +44% 3
> < c="" i?="" x="" s="" a="" n="" 47="" +="" v="" i="" 4="" fl="" mi="" ~="" pattern="" oi="" terminal="" posi="" on="" areas="" [nata="" pattern="" ofsoldering="" pads]="" d‘m="" mlineters="" inches="" mn="" max="" nn="" max="" a="" 0.70="" 0="" 90="" 0="" 020="" 0="" 035="" ai="" 0="" 00="" 0="" 05="" 0="" 000="" 0="" 002="" n="" 0="" 27="" 0="" 37="" 0="" 011="" 0="" 015="" m="" 2="" 50="" 2="" 70="" 0="" 090="" 0105="" c="" d="" 10="" 0="" 30="" o="" 004="" 0="" 012="" d="" 3="" 10="" 330="" d="" 122="" 0130="" e="" 2="" 90="" 310="" 0="" 114="" 0122="" e="" 0.65="" d="" 026="" hd="" 3="" 20="" 340="" 012s="" 0134="" he="" 320="" 340="" 0126="" 0134="" l="" 0="" d7="" 0="" 25="" d="" 1103="" 0="" 010="" li="" 0="" d7="" 0="" 25="" 0="" dos="" 0="" 010="" la="" 0="" 20="" 040="" 0="" ma="" 0="" ma="" lpl="" 025="" m5="" 0010="" 0010="" lpz="" 2="" 20="" 240="" o="" 087="" 0="" 084="" x=""> 010 - 0004
y - 010 - 0004
[W MLIMETERS INCHES
MN MAX NN MAX
[)2 - 047 - 0019
N - 27D - 0105
I1 - 05D - 0020
I2 , 055 , 0022
I3 , 2A0 , 0094
IA , 340 , 0134
Dimension in mm/inches
RQ3E180AJ Datasheet
llDimensions
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© 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150730 - Rev.002
Notice
it
2t
3t
4’
5|
Gt
7i
at
5t
it)!
ill
i2i
i3!
i4i
Notes
The rntcrrnaoon contained heretn ts suhteet to change without nottce
aetore you use our Products, please contact our sales representatiue and uenty the latest specitim-
(ions
Although ROHM ts eonttnuously worktng to improye product reltabiiity and quairty. semiconr
ductors can breait down and nraltunctton due to various tactors
Thereiore, tn order to preyent personal iniury or irre arratng irom iatlure, please take saiely
measures such as comptylno With the deratino cnaracterrstics, trrtpternenttnp redundant and
itre prevention deetgns, and utiirztng backups and iail-sate procedures ROHM shall have no
lbesgglfilailily tor any damages aristng out ot the use oi our Poducts beyond the rattng specined
y .
Examptes oi apptlmtlon ciicuits, ctrcutt constants and any outer rntonnation contatned heretn are
proytded only to rliustrate the standard usage and operations ot the Products The pertpheral
condtttons must oe taken into account when destgmrtg circuits ior mass productton
The technrmi tniormatton spectited herein ts rntended only to show the typical iuncttons oi and
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The Products are tntended tor use tn general etectronic egurpment (I e AVr‘OA deyrces, communt-
cation consumer systems, ganrtng/entenarnntent sets) as well as the appltcations rndtcated in
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The Products spec-tied tn thts document are not destgned to be radration tolerant,
Per use oi our Products tn appitcations tequtiirig e htgh degree oi reltaotirty (as exemplified
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the recommended usage condrltona and apecitioations contained herein.
RDHM has used reasonable care to ensur the accuracy oi the tniormaoon contained in thrs
document. howeyer, HOHM does not warrants that such tniormatton ls etloistree. and how
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