© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1 1Publication Order Number:
NTSB40200CT/D
NTSB40200CTG,
NTSJ40200CTG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.53 V at IF = 5 A
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•Low Thermal Resistance
•High Surge Capability
•These Devices are Pb−Free and Halogen Free/BFR Free
Typical Applications
•Switching Power Supplies including Telecom AC to DC Power
Stages, LED Lighting and ATX
•High Voltage DC−DC Converters
•Freewheeling and OR−ing Diodes
•Output Rectifier in Welding Power Supplies
•Industrial Automation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
VERY LOW FORWARD
VOLTAGE, LOW LEAKAGE
SCHOTTKY BARRIER
RECTIFIERS 40 AMPERES,
200 VOLTS
1
3
2, 4
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PIN CONNECTIONS
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
D2PAK
CASE 418B
TO−220FP
CASE 221AH
3
4
12
NTSB40200CTG, NTSJ40200CTG
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200 V
Average Rectified Forward Current
(Rated VR, TC = 125°C) NTSB40200CTG Per device
(Rated VR, TC = 130°C) NTSB40200CTG Per diode
(Rated VR, TC = 65°C) NTSJ40200CTG Per device
(Rated VR, TC = 42°C) NTSJ40200CTG Per diode
IF(AV) 40
20
20
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 115°C) NTSB40200CTG Per device
(Rated VR, Square Wave, 20 kHz, TC = 125°C) NTSB40200CTG Per diode
(Rated VR, Square Wave, 20 kHz, TC = 40°C) NTSJ40200CTG Per device
(Rated VR, Square Wave, 20 kHz, TC = 25°C) NTSJ40200CTG Per diode
IFRM 80
40
40
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 250 A
Operating Junction Temperature TJ−55 to +150 °C
Storage Temperature Tstg −55 to +150 °C
ESD Rating (Human Body Model) 3A
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol NTSB40200CTG NTSJ40200CTG Unit
Typical Thermal Resistance Junction−to−Case Per Diode
Junction−to−Case Per Device
Junction−to−Ambient Per Device
RqJC
RqJA
1.29
0.79
40
6.94
6.05
105
°C/W
ELECTRICAL CHARACTERISTICS
Rating Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
(IF = 20 A, TJ = 25°C)
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
(IF = 20 A, TJ = 125°C)
VF0.68
0.74
0.79
0.84
0.53
0.60
0.64
0.68
−
−
−
1.45
−
−
−
0.80
V
Instantaneous Reverse Current (Note 1)
(VR = 180 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
(VR = 180 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
IR3
5
5.3
7
−
100
−
30
mA
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
NTSB40200CTG, NTSJ40200CTG
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3
TYPICAL CHARACTERISTICS
1 10 100
0.1
1
10
100
0.00 0.40 0.80 1.20 1.60 2.00 2.40
Figure 1. Typical Instantaneous Forward
Characteristics Figure 2. Maximum Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
VR, REVERSE VOLTAGE (V)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
TA = 125°C
TA = 150°C
TA = 25°C
TA = 125°C
TA = 150°C
TA = 125°C
TA = 25°C
1.E−06
1.E−05
1.E−04
IR, INSTANTANEOUS REVERSE CURRENT (A)
1.E−03
1.E−02
1.E−01
TA = 125°C
TA = 150°C
TA = 25°C
TJ = 25°C
TA = −55°C
TA = 25°C
TA = −55°C
100
1k
10k
TA = 150°C
1.E−07
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
0 20 40 60 80 100 120 140 160 180 200
TA = −55°CTA = −55°C
0 20 40 60 80 100 120 140 160 180 200
10
Square Wave
Square Wave
dc
NTSB40200CTG, NTSJ40200CTG
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4
TYPICAL CHARACTERISTICS
Figure 6. Current Derating per Diode
(NTSB40200CT)
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD
CURRENT (A)
RqJC = 1.29°C/W
Square Wave
DC
0
5
10
15
20
25
30
35
40
0 20 40 60 80 100 120 140
Figure 7. Current Derating per Device
(NTSB40200CT)
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD
CURRENT (A)
RqJC = 0.79°C/W
Square Wave
DC
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140
Figure 8. Current Derating per Diode
(NTSJ40200CTG)
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD
CURRENT (A)
RqJC = 6.94°C/W
Square Wave
DC
0
5
10
15
20
25
30
35
40
0 20 40 60 80 100 120 140
Figure 9. Current Derating per Device
(NTSJ40200CTG)
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD
CURRENT (A)
RqJC = 6.05°C/W
Square Wave
DC
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140
Figure 10. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (A)
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
TJ = 150°C
Square Wave
dc
IPK/IAV = 20
IPK/IAV = 10 IPK/IAV = 5
0
5
10
15
20
25
30
35
40
45
50
55
60
0 5 10 15 20 25 30 35 40
NTSB40200CTG, NTSJ40200CTG
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5
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
1
10
100
Figure 11. Typical Transient Thermal Response per Device (NTSB40200CTG)
t, PULSE TIME (sec)
0.010.001 0.10.00010.000010.000001
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1 10 100 1000
Single Pulse
20%
50%
10%
5%
2%
1%
Psi Tab−A
RqJA = 40°C/W
0.001
0.01
0.1
1
10
Figure 12. Typical Transient Thermal Response per Device (NTSJ40200CTG)
t, PULSE TIME (sec)
0.010.001 0.10.00010.000010.000001
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1 10 100 1000
Single Pulse
20%
50%
10%
5%
2%
1%
RqJC = 6.05°C/W
WU
kw
NTSB40200CTG, NTSJ40200CTG
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6
ORDERING INFORMATION
Device Package Shipping
NTSB40200CTG D2PAK
(Pb−Free) 50 Units / Rail
NTSB40200CTT4G D2PAK
(Pb−Free) 800 / Tape & Reel
NTSJ40200CTG
(In Development) TO−220FP
(Halide−Free) 50 Units / Rail
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
G = Pb−Free Package
AY WW
TS40200CG
AKA
D2PAK
AYWW
TS40200CG
AKA
TO−220FP
NTSB40200CTG, NTSJ40200CTG
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7
PACKAGE DIMENSIONS
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
D2PAK 3
CASE 418B−04
ISSUE K
» E L—C' ED
52+ @P 9A
. r/69-fl- "" i A1
are‘ 3
T $1
L Ll]
L
We“ c4
“2%. "IBM A2
a» e
m J
NTSB40200CTG, NTSJ40200CTG
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8
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE D
DIM MIN MAX
MILLIMETERS
D14.70 15.30
E9.70 10.30
A4.30 4.70
b0.54 0.84
P3.00 3.40
e
L1 --- 2.10
c0.49 0.79
L12.70 14.73
b2 1.10 1.40
Q2.80 3.20
A2 2.50 2.70
A1 2.50 2.90
H1 6.70 7.10
E
Q
L1
b2
e
D
L
P
123
b
SEATING
PLANE
A
A1
H1
A2
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
2.54 BSC
M
0.14 M
A
A
B
C
E/2
M
0.25 M
AB
3X
C
3X
B
NOTE 3
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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P
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Phone: 81−3−5817−1050
NTSB40200CT/D
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