VS-10BQ015-M3 Datasheet by Vishay Semiconductor Diodes Division

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VS-10BQ015-M3
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Revision: 29-May-12 1Document Number: 93349
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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Schottky Rectifier, 1.0 A
FEATURES
Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
125 °C TJ operation (VR < 5 V)
Optimized for OR-ing applications
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ015-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package SMB
IF(AV) 1.0 A
VR15 V
VF at IF0.21 V
IRM 35 mA at 100 °C
TJ max. 125 °C
Diode variation Single die
EAS 1.0 mJ
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1.0 A
VRRM 15 V
IFSM tp = 5 μs sine 140 A
VF1.0 Apk, TJ = 125 °C 0.21 V
TJRange - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ015-M3 UNITS
Maximum DC reverse voltage VR15 V
Maximum working peak reverse voltage VRWM 25
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TL = 134 °C, rectangular waveform 1.0 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
140
A
10 ms sine or 6 ms rect. pulse 40
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 2 mH 1.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
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VS-10BQ015-M3
www.vishay.com Vishay Semiconductors
Revision: 29-May-12 2Document Number: 93349
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
1 A TJ = 25 °C 0.33
V
2 A 0.39
1 A TJ = 125 °C 0.21
2 A 0.29
Maximum reverse leakage current
See fig. 2 IRM
TJ = 25 °C VR = Rated VR
0.5 mA
TJ = 100 °C 35
Threshold voltage VF(TO) TJ = TJ maximum -V
Forward slope resistance rt-m
Typical junction capacitance CTVR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 390 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ (1) - 55 to 125 °C
Maximum storage temperature range TStg - 55 to 150
Maximum thermal resistance,
junction to lead RthJL (2) DC operation
See fig. 4 36
°C/W
Maximum thermal resistance,
junction to ambient RthJA DC operation 80
Approximate weight 0.10 g
0.003 oz.
Marking device Case style SMB (similar to DO-214AA) 1C
dPtot
dTJ
------------- 1
RthJA
--------------<
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VS-10BQ015-M3
www.vishay.com Vishay Semiconductors
Revision: 29-May-12 3Document Number: 93349
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.1
1
10
Tj = 25°C
TJ = 100 °C
TJ = 125 °C
TJ = 75 °C
V
R
-
Reverse Voltage (V)
IR - Reverse Current (mA)
0 3 6 9 12 15
0.01
0.1
1
10
100
25 °C
100 °C
75 °C
50 °C
1000
100
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
0
10
15312
69
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
100
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t2
t1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
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VS-10BQ015-M3
www.vishay.com Vishay Semiconductors
Revision: 29-May-12 4Document Number: 93349
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
I
F(AV)
-
Average
Forward Current (A)
Allowable Case Temperature (°C)
0.0 0.3 0.6 0.9 1.2 1.5
50
60
70
80
90
100
110
DC
Square wave (D = 0.50)
80 % rated VR applied
see note (1)
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
IF(AV) - Average Forward Current (A)
Average Power Loss (W)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
0.1
0.2
0.3
0.4
DC
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
RMS limit
tp - Square Wave Pulse Duration (µs)
100
1000
IFSM - Non-Repetitive Surge Current (A)
10 100 1000 10 000
At any rated load condition and
with rated VRRM applied
following surge
10
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VS-10BQ015-M3
www.vishay.com Vishay Semiconductors
Revision: 29-May-12 5Document Number: 93349
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10BQ015-M3/5BT 5BT 3200 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95401
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
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