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wcsp 2mmx2mm
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PAM8404
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3W/CH FILTERLESS STEREO CLASS-D AUDIO AMPLIFIER
Description
The PAM8404 is a 3W high efficiency filterless Class-D audio
amplifier in 4mmX4mm and 2mmX2mm wafer chip scale (WCSP)
packages that requires few external components.
Features like 89% efficiency, -63dB PSRR, improved RF-rectification
immunity, and very small PCB area make the PAM8404 Class-D
amplifier ideal for cellular handset and PDA applications.
In cellular handsets, the earpiece, speaker phone, and melody ringer
can each be driven by the PAM8404. The PAM8404 allows
independent gain by summing signals from seperate sources, and
has as low as 43µV noise floor.
PAM8404 is available in QFN 4mmx4mm and WCSP 2mmx2mm
packages.
Features
3W Output at 10% THD with a 4 Load and 5V Supply
Supply Voltage from 2.5V to 5.5V
Efficiency Up to 89%
Superior Low Noise without Input
Few External Components to Save the Space and Cost
Short Circuit Protection
Thermal Shutdown
Space Saving Packages :
2mm X 2mmWCSP
4mm X 4mm Thin QFN
Pb-Free Packages
Applications
LCD Monitor / TV Projector
Notebook Computers
Portable Speakers
Portable DVD Players, Game Machines
Cellular Phones/Speaker Phones
Pin Assignments
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PAMB404
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Typical Applications Circuit
Pin Descriptions
Pin
Name
Pin Number Function
QFN4x4 WCSP2x2
G1 1 B2 Gain Select (MSB)
OUTL+ 2 A3 Left Channel Positive Differential Output
PVDD 313 A2 Power Supply (Must be Same Voltage as AVDD)
PGND 412 C4 Power Ground
OUTL- 5 A4 Left Channel Negative Differential Output
NC 610 — Not Connected
SDL 7 B4 Left Channel Shutdown Terminal (active low)
SDR 8 B3 Right Channel Shutdown Terminal (active low)
AVDD 9 D2 Analog Supply (Must be Same Voltage as PVDD)
OUTR- 11 D4 Right Channel Negative Differential Output
OUTR+ 14 D3 Right Channel Positive Differential Output
G0 15 C2 Gain Select (LSB)
INR+ 16 D1 Right Channel Positive Input
INR- 17 C1 Right Channel Negative Input
AGND 18 C3 Analog Ground
INL- 19 B1 Left Channel Negative Input
INL+ 20 A1 Left Channel Positive Input
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PAM8404 3 a! 18
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Functional Block Diagram
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter Rating Unit
Supply Voltage 6.0 V
Input Voltage -0.3 to VDD +0.3
Maximum Junction Temperature 150
°C
Storage Temperature -65 to +150
Soldering Temperature 250, 10sec
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Parameter Rating Unit
Supply Voltage Range 2.5 to 5.5 V
Operation Temperature Range -40 to +85 °C
Junction Temperature Range -40 to +125 °C
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Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient) WCSP2x2-16 JA 64
°C/W
QFN4x4-20 31
Thermal Resistance (Junction to Case) WCSP2x2-16 JC —
QFN4x4-20 13
Electrical Characteristics (@TA = +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.)
QFN4X4-20
Symbol Parameter Test Conditions Min Typ Max Units
VDD Supply Power
2.5 5.5 V
PO Output Power
THD+N = 10%, f = 1kHz, RL = 4 VDD = 5.0V 3
W
VDD = 3.6V 1.5
THD+N = 1%, f = 1kHz, RL = 4 VDD = 5.0V 2.35 W
VDD = 3.6V 1.2
THD+N = 10%, f = 1kHz, RL = 8 VDD = 5.0V 1.7 W
VDD = 3.6V 0.9
THD+N = 1%, f = 1kHz, RL = 8 VDD = 5.0V 1.4 W
VDD = 3.6V 0.7
THD+N Total Harmonic Distortion Plus
Noise
VDD = 5.0V, Po = 0.5W, RL = 8 f = 1kHz 0.15 %
VDD = 3.6V, Po = 0.5W, RL = 8 0.27
VDD = 5.0V, Po = 1W, RL = 4 f = 1kHz 0.23 %
VDD = 3.6V, Po = 1W, RL = 4 0.24
PSRR Power Supply Ripple Rejection VDD = 5.0V, Inputs AC-Grounded with
CIN = 1.0F
f = 100kHz -48 dB
f = 1kHz -63
CS Crosstalk VDD = 5V, Po = 0.5W, RL = 4,
Gv = 23dB f = 1kHz -93 dB
SNR Signal-to-Noise VDD = 5V, VORMS = 1VGv = 23dB A-weighting 87 dB
VN Output Noise
VDD = 5V, Inputs AC-Grounded with
CIN = 1F A-weighting 43 µV
BW 22Hz – 22kHz No A-weighting 59
Dyn Dynamic Range VDD = 5V, THD = 1% A-weighting 97 dB
Efficiency RL = 8, THD = 10% f = 1kHz 89 %
RL = 4, THD = 10% 84
IQ Quiescent Current VDD = 5.0V No load 11
mA
VDD = 3.6V 6
ISD Shutdown Current VDD = 5.5V VSD = 0.3V < 1 µA
RDS(ON) Static Drain-to-Source On-State
Resistor IDS = 500mA,VGS = 5V PMOS 250 m
NMOS 170
fsw Switching Frequency VDD = 3V to 5V 300 kHz
VOS Output Offset Voltage VIN = 0V, VDD = 5V 10 mV
Gain Closed-Loop Voltage Gain VDD = 5V, RL = 4, f = 1kHz
G0 = L, G1 = L 6
dB
G0 = H, G1 = L 12
G0 = L, G1 = H 18
G0 = H, G1 = H 24
OTP Over Temperature Protection No Load, Junction Temperature VDD = 5V 150 °C
OTH Over Temperature Hysterisis 50
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Electrical Characteristics (@TA = +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.)
WCSP2x2-16
Symbol Parameter Test Conditions Min Typ Max Units
VDD Supply Power
2.5 5.5 V
PO Output Power
THD+N = 10%, f = 1kHz, RL = 4 VDD = 5.0V 2.2 W
VDD = 3.6V 1.2
THD+N = 1%, f = 1kHz, RL = 4 VDD = 5.0V 1.8 W
VDD = 3.6V 1
THD+N = 10%, f = 1kHz, RL = 8 VDD = 5.0V 1.5 W
VDD = 3.6V 0.8
THD+N = 1%, f = 1kHz, RL = 8 VDD = 5.0V 1.2 W
VDD = 3.6V 0.6
THD+N Total Harmonic Distortion Plus
Noise
VDD = 5.0V, Po = 0.5W, RL = 8 f = 1kHz 0.3 %
VDD = 3.6V, Po = 0.5W, RL = 8 0.4
VDD = 5.0V, Po = 1W, RL = 4 f = 1kHz 0.3 %
VDD = 3.6V, Po = 1W, RL = 4 0.2
PSRR Power Supply Ripple Rejection VDD = 5.0V, Inputs AC-Grounded with
CIN = 1.0F f = 217kHz -50 dB
CS Crosstalk VDD = 5.0V, Po = 0.5W, RL = 4,
Gv = 23dB f = 1kHz -70 dB
SNR Signal-to-Noise VDD = 5V, VORMS = 1VGv = 23dB A-weighting 85 dB
VN Output Noise
VDD = 5V, Inputs AC-Grounded with
CIN = 0.47F A-weighting 34 µV
BW 22Hz – 22kHz No A-weighting 54
Dyn Dynamic Range VDD = 5V, THD = 1% A-weighting 98 dB
Efficiency RL = 8, THD = 10% f = 1kHz 85 %
RL = 4, THD = 10% 75
IQ Quiescent Current VDD = 5.0V No load 12
mA
VDD = 3.6V 7
ISD Shutdown Current VDD = 2.5V to 5.5V VSD = 0.3V < 1 µA
RDS(ON) Static Drain-to-Source On-State
Resistor IDS = 500mA,VGS = 5V PMOS 500 m
NMOS 460
fsw Switching Frequency VDD = 5V 300 kHz
VOS Output Offset Voltage VIN = 0V, VDD = 5V 20 mV
Gain Closed-Loop Voltage Gain VDD = 5V, RL = 4, f = 1kHz
G0 = L, G1 = L 6
dB
G0 = H, G1 = L 12
G0 = L, G1 = H 18
G0 = H, G1 = H 24
OTP Over Temperature Protection No Load, Junction Temperature VDD = 5V 150 °C
OTH Over Temperature Hysterisis 50
of
Efficiencyszutput Power Efliciency vs Output Power
R580. Vnn=5V. L=33uH R =4Q.V =5V. L=33 H
100 ‘00
90 90
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THD+N vs Output Power THD+N vs Output Power
R580. Gain=23dB. 1=1kHz R540. Gain=23dB. 1=1kHz
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Typical Performance Characteristics (@TA = +25°C, unless otherwise specified.)
QFN4X4-20
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THD‘N vs Frequency
VDD=5V‘ R‘=80‘ CN=1uF.Gain=23dB
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V,,,=5V. R540. Cu=1uF
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Crosstalk vs Frequency
VW=5V, R540, Gain=23dB
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THD+N vs Frequency
VW=5V. R54 D. Cw=1pF.GaIn=23d B
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PSSR vs Frequency
Input ac-ground. Vno=5V ZDDmVpp.
=40. C =1 F. ain=16dB
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Noise Floor FFT
Inp uts ac-grou nd, VBD=5V,C‘~=1uF, Rl=4fl,
Gain=23dB
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Typical Performance Characteristics (cont.) (@TA = +25°C, unless otherwise specified.)
QFN4X4-20
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Quiescent Current vs Supply Voltage Frequency vs Supply Voltage
No Input‘ RL=N0 Load Inputac-gmund
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Output Power vs Supply Voltage Output Power vs Supply Voltage
Cw=1uF. R580. Gain=23dB. f=1kHZ CN=1uF, R540, Gain=23dB, i=1 kHz
2 5 A
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Typical Performance Characteristics (cont.) (@TA = +25°C, unless otherwise specified.)
QFN4X4-20
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Efficiency vs Output Power Effi ency vs Output Power
90 =BD.V =5V,L=22 H 100 R: D.V =5V.L=22 H
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R580. Gain=23dEL f=1kHz 1R =40‘ Gain=2305. t=1kHz
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Pu=0.5W.RL=BQ‘C1~=1uF,Gain=ZadB Pa=0.5W‘ R540, Cw=1uEGain=23dB
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Typical Performance Characteristics (cont.) (@TA = +25°C, unless otherwise specified.)
WCSP2x2-16
of
THD+st Frequency THD+N vs Frequency
vm,=5v. R580, CN=1uF. Gain=2ad B v,,.,=5v, R540. cm=1pE Gain=23dB
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VW=5V, Rl=40. cfl=1pF Input ac-ground.V.,,,=5V ZDDmVpp.
QR =40 C =1 F ain=5dB
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Gain=23dB
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PAM8404
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Typical Performance Characteristics (cont.) (@TA = +25°C, unless otherwise specified.)
WCSP2x2-16
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Quiescent Curre nt vs Supply Voltag e Freq uency vs Su pply Voltage
Nolnput. Rk=No Load lnputac-ground
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Cm=1uF. R =8fl, Gain=23dB. l=1kHz 3 0,51 pF. RL=4fl, Gain=23dB. «=1 kHz
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Typical Performance Characteristics (cont.) (@TA = +25°C, unless otherwise specified.)
WCSP2x2-16
of
PAM8404 Demo Board
Load
{OUT AP
AP Syslem One '"pu‘ LowPUSS AP System One
Generofiov Fmer Analyze!
6ND ‘OUT Auxoozs
VDD
PowevSupply
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Application Information
Test Setup for Performance Testing
Notes: 1. The AP AUX-0025 low pass filter is necessary for class-D amplifier measurement with AP analyzer.
2. Two 22H inductors are used in series with load resistor to emulate the small speaker for efficiency measurement.
Gain Settin
The gain of PAM8404 can be selected as 6,12,18 or 24 dB utilizing the G0 and G1 gain setting pins. The gains showed in the following table are
realized by changing the input resistors inside the amplifier. The input impedance changes with the gain setting.
Table 1. Gain Setting
G1 G0 Gain
(V/V)
Gain
(dB)
Input
Impedance
(kΩ)
0 0 2 6 28.1
0 1 4 12 17.3
1 0 8 18 9.8
1 1 16 24 5.2
For optimal performance the gain should be set to 2x (RI = 150k). Lower gain allows the PAM8404 to operate at its best, and keeps a high
voltage at the input making the inputs less susceptible to noise. In addition to these features, lower value of Gain minimizes pop noise.
Input Capacitors (CI)
In the typical application, an input capacitor, CI, is required to allow the amplifier to bias the input signal to the proper DC level for optimum
operation. In this case, CI and the input impedance RI form a high-pass filter with the corner frequency determined by the follow equation:
C
R2
1
f
I
I
C
It is important to consider the value of CI as it directly affects the low frequency performance of the circuit. When Ri i s 28.1k and the
specification calls for a flat bass response are down to 200Hz, the equation is reconfigured as follows:
f
R2
1
C
C
I
I
When input resistance variation is considered, the CI is 28nF, so one would likely choose a value of 33nF. A further consideration for this
capacitor is the leakage path from the input source through the input network (CI, RI + RF) to the load. This leakage current creates a DC offset
voltage at the input to the amplifier that reduces useful headroom, especially in high gain applications.
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Application Information
Input Capacitors (CI) (cont.)
For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the
capacitor should face the amplifier input in most applications as the DC level is held at VDD/2, which is likely higher than the source DC level.
Please note that it is important to confirm the capacitor polarity in the application.
If the corner frequency is within the audio band, the capacitors should have a tolerance ±10% or better, because any mismatch in capacitance
cause an impedance mismatch at the corner frequency and below.
Decoupling Capacitor (CS)
The PAM8404 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic
distortion (THD) as low as possible. Power supply decoupling also prevents the oscillations causing by long lead length between the amplifier
and the speaker.
The optimum decoupling is achieved by using two different types of capacitors that target on different types of noise on the power supply leads.
For higher frequency transients, spikes, or digital hash on the line, a good low equivalent series-resistance (ESR) ceramic capacitor, typically
1µF, is placed as close as possible to the device each VDD and PVDD pin for the best operation. For filtering lower frequency noise signals, a
large ceramic capacitor of 10µF or greater placed near the audio power amplifier is recommended.
How to Reduce EMI
Most applications require a ferrite bead filter for EMI elimination as shown at Figure 1. The ferrite filter reduces EMI of around 1MHz and higher.
When selecting a ferrite bead, choose one with high impedance at high frequencies and low impedance at low frequencies.
Figure 1. Ferrite Bead Filter to Reduce EMI
Shutdown Operation
In order to reduce power consumption while not in use, the PAM8404 contains shutdown circuitry to turn off the amplifier's bias circuitry. It
features independent shutdown controls for each channel. This shutdown turns the amplifier off when logic low is placed on the SDx pin. By
switching the shutdown pin to GND, the PAM8404 supply current draw will be minimized in idle mode.
Short Circuit Protectrion (SCP)
The PAM8404 has short circuit protection circuitry on the outputs to prevent the device from damage when output-to-output shorts or output-to-
GND shorts occur. When a short circuit occurs, the device immediately goes into shutdown state. Once the short is removed, the device will be
reactivated.
Over Temperature Protection (OTP)
Thermal protection on the PAM8404 prevents the device from damage when the internal die temperature exceeds +150°C. There is a +15°C
tolerance on this trip point from device to device. Once the die temperature exceeds the set point, the device will enter the shutdown state and
the outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die decreased by 50°C. This large
hysteresis will prevent motor boating sound well and the device begins normal operation at this point with no external system interaction.
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Application Information
POP and Click Circuitry
The PAM8404 contains circuitry to minimize turnon and turn-off transients or “click and pops”, where turn-on refers to either power supply turnon
or device recover from shutdown mode. When the device is turned on, the amplifiers are internally muted. An internal current source ramps up
the internal reference voltage. The device will remain in mute mode until the reference voltage reach half supply voltage VDD/2. As soon as the
reference voltage is stable, the device will begin full operation. For the best power-off pop performance, the amplifier should be set in shutdown
mode prior to removing the power supply voltage.
PCB Layout Guidelines
Grouding
It is recommended to use plane grounding or separate grounds. Do not use one line connecting power GND and analog GND. Noise currents in
the output power stage need to be returned to output noise ground and nowhere else. When these currents circulate elsewhere, they may get
into the power supply, or the signal ground, etc, even worse, they may form a loop and radiate noise. Any of these instances results in degraded
amplifier performance. The output noise ground that the logical returns for the output noise currents associated with Class-D switching must tie
to system ground at the power exclusively. Signal currents for the inputs, reference need to be returned to quite ground. This ground only ties to
the signal components and the GND pin. GND then ties to system ground.
Power Supply Line
Same as the ground, VDD and PVDD need to be separately connected to the system power supply. It is recommended that all the trace could be
routed as short and thick as possible. For the power line layout, just imagine water stream, any barricade placed in the trace (shown in Figure 2)
could result in the bad performance of the amplifier.
Figure 2. Power Line
Component Placement
Decoupling capacitors-As previously described, the high-frequency 1F decoupling capacitors should be placed as close to the power supply
terminals (VDD and PVDD) as possible. Large bulk power supply decoupling capacitors (10F or greater) should be placed near the PAM8404 on
the PVDD terminal.
Input capacitors need to be placed very close to input pins.
Output filter - The ferrite EMI filter should be placed as close to the output terminals as possible for the best EMI performance, and the capacitors
used in the filters should be grounded to system ground.
of
PAM8404 X X X
AH
Package Type Number of Pins Shipping Package
Z: WCSP E3 16 R: Tape & Reel
K: QFNAxA GI 20
WCSP 2mmx2mm QFN 4mmx4mm
Top View Top Vlew
A1 A2 A3 A4
B1
C1
D1
PAM8404
i
.FR
YW
(Marking)
Documem number DSxxxxx Rev 171
15 of 18
www.diodes.com
: Product Code
01 PAM 84 04
Intern al Code
Year
Week
PAM8404
Document number: DSxxxxx Rev. 1 - 1
15 of 18
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November 2012
© Diodes Incorporated
PAM8404
A Product Line o
f
Diodes Incorporated
Ordering Information
Part Number Part Marking Package Type Standard Package
PAM8404ZER FR
YW WCSP-16 3000 Units/Tape&Reel
PAM8404KGR P8404
XXXYW QFN4x4-20L 3000 Units/Tape&Reel
Marking Information
of
,4U 0 q) 0 u -
,1 7 C \
T (—
+ 0 g g + L
3 D1 C
m: I" C
“ F O ”1 0
41;, "
Top View Bottom Vlew
1 z-' 1-1 —( 1-1
Slde Vlew
Dimensions In Millimeters Dimensions In Inches
Sm” Min. Max. Min. Max.
A 0700/0800 0800/0900 002810.031 0031/0035
A1 0000 0.050 0.000 0.002
A3 0.203REF. 0.008REF.
D 3.900 4.100 0.154 0.161
E 3.900 4.100 0.154 0.161
D1 1.900 2.100 0.075 0083
E1 1.900 2.100 0.075 0.083
k 0.200MIN. 0.008MIN.
b 0.180 I 0,300 0.007 I 0.012
e 0.500TYP. 0.020TYP.
L 0.300 | 0.500 0.012 | 0.020
PAM8404 1a 0118
Document number DSxxxxx Rev 171 www.diodes.com
PAM8404
Document number: DSxxxxx Rev. 1 - 1
16 of 18
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PAM8404
A Product Line o
f
Diodes Incorporated
Package Outline Dimensions (All dimensions in mm.)
QFN4X4-20
of
1,00
1.9510 02
fl 0 so
I \
1—— O ep <9 0="" ¢="" |="" —="" 5="" 1="" 95m="" 02="" 0="" ®="" 0="" 2="" "\vj="" 1="" mn="" a1="" 1»="" .="" 0j5="" \mtx="" arm="" 2::="" unns-millimeter=""><— 0="" 235m="" 02="" 041510="" 04="" pam8404="" 17="" o!="" 18="" document="" number="" dsxxxxx="" rev="" 171="" www.diodes.com="">PAM8404
Document number: DSxxxxx Rev. 1 - 1
17 of 18
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© Diodes Incorporated
PAM8404
A Product Line o
f
Diodes Incorporated
Package Outline Dimensions (cont.) (All dimensions in mm.)
WCSP2x2-16
of
PAMB404 18 of 18
Document number DSxxxxx Rev 171 www.6iodes.com
PAM8404
Document number: DSxxxxx Rev. 1 - 1
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A Product Line o
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Diodes Incorporated
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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Copyright © 2012, Diodes Incorporated
www.diodes.com
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