NTZD3154N Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
June, 2019 Rev. 3
1Publication Order Number:
NTZD3154N/D
NTZD3154N
MOSFET – Dual, N-Channel,
Small Signal
20 V, 540 mA
Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter Symbol Value Unit
DraintoSource Voltage VDSS 20 V
GatetoSource Voltage VGS ±7.0 V
Continuous Drain Current
(Note 1) Steady
State
TA = 25°C
ID
540 mA
TA = 85°C 390
Power Dissipation
(Note 1) Steady State PD250 mW
Continuous Drain Current
(Note 1) t v 5 s
TA = 25°C
ID
570 mA
TA = 85°C410
Power Dissipation
(Note 1) t v 5 s PD280 mW
Pulsed Drain Current tp = 10 msIDM 1.5 A
Operating Junction and Storage Temperature TJ,
TSTG
55 to
150
°C
Source Current (Body Diode) IS350 mA
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
JunctiontoAmbient – Steady State
(Note 1) RqJA
500 °C/W
JunctiontoAmbient – t v 5 s (Note 1) 447
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
SOT5636
CASE 463A
MARKING
DIAGRAM
V(BR)DSS RDS(on) Typ ID Max (Note 1)
20
400 mW @ 4.5 V
500 mW @ 2.5 V 540 mA
700 mW @ 1.8 V
1
6
TV M G
G
Top View
D1
G2
S2
S1
G1
6
5
4
1
2
3
D2
PINOUT: SOT563
D1
S1
G1
D2
S2
G2
NChannel
MOSFET
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
TV = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA20 − − V
DraintoSource Breakdown Voltage Tem-
perature Coefficient
V(BR)DSS/TJ14 mV/°C
Zero Gate Voltage Drain Current
IDSS VGS = 0 V
VDS = 16 V
TJ = 25°C 1.0 mA
TJ = 125°C 5.0
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = "4.5 V "5.0 mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA0.45 1.0 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ 2.0 mV/°C
DraintoSource On Resistance
RDS(on)
VGS = 4.5 V, ID = 540 mA0.4 0.55 W
VGS = 2.5 V, ID = 500 mA0.5 0.7
VGS = 1.8 V, ID = 350 mA0.7 0.9
Forward Transconductance gFS VDS = 10 V, ID = 540 mA1.0 S
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1.0 MHz, VDS = 16 V
80 150 pF
Output Capacitance COSS 13 25
Reverse Transfer Capacitance CRSS 10 20
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 10 V; ID = 540 mA
1.5 2.5 nC
Threshold Gate Charge QG(TH) 0.1
GatetoSource Charge QGS 0.2
GatetoDrain Charge QGD 0.35
SWITCHING CHARACTERISTICS, VGS = V (Note 4)
TurnOn Delay Time td(ON)
VGS = 4.5 V, VDD = 10 V, ID = 540 mA,
RG = 10 W
6.0 ns
Rise Time tr4.0
TurnOff Delay Time td(OFF) 16
Fall Time tf8.0
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD VGS = 0 V,
IS = 350 mA
TJ = 25°C0.7 1.2 V
TJ = 125°C0.6
Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 350 mA 6.5 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surfacemounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
1.0V § § ,_ vGS : 1.0 v ._ E v85:2.0vm 2.2V E c: n: c: n: 3 3 u 0 Z V65 : 1.4 V Z <_( 3="" c:="" 0:="" 1:1="" 12="" :3="" d="" a="" _="" v65:1.2v="" ‘="" t0:="" 50="" vgs="" :="" 1.0="" v="" 0="" 1="" 2="" a="" 4="" 5="" 6="" 7="" a="" 9="" 10="" 0="" 5="" 1.0="" 1="" 5="" 2.0="" 2.5="" vds.="" drain-to-source="" voltage="" (v)="" v55.="" gate-to-source="" voltage="" 1v)="" figure="" 1.="" onifiegion="" characteristics="" figure="" 2.="" transier="" characteristics="" 5="" 1.0="" 1.1.1="" 1="" e="" id="" :="" 0.54="" a="" 8="" 0-9="" t1="" :="" 25°c="" 7="" g="" 0.5="" 3="" [‘3'="" a="" 0.0="" 8="" a="" n:="" v="" 1="" v="" 0.7="" 3="" 3="" o="" 5="" g="" e="" 0.7="">7 3 1 z >— — >— 0 6 >9 9 0.6 E ‘3 1 m a) E g '3 Lu 05 V05 E 0.5 3 ‘ i D. E v95 g 0.4 \ u: 0.4 M n m 0.3 0.3 1 2 a 4 5 6 0,2 0.4 0,6 0 V135, GATE-TO-SOUHCE VOLTAGE (V) ID, DRAW CURH Figure 3. Onenesistance versus Figure 4. OnrResistance v Gateitoisource Voltage and Gate Vo i i 1.1.1 - 1.0 ID : 0.54A g B VGs : 4.5 V N - 3 3 < 8="">< 1.6="" 5="" 2="" m="" o‘="" u:="" (d="" 1.="" o="" 1.4="" g="" 1="" z="" e="" v="" m="" 100="" g="" l“)="" 1.2="" 4'="" d="" e="" a="" 1="" 9="" £0;="" a="" 1.0="" c:="" u:="" 0.0="" 0.0="" 10="" -50="">25 0 25 50 75 100 125 150 2 4 6 B 10 12 T1. JUNCTION TEMPERATURE 150) v95. DRAiN-TO-SOURCE Figure 5. Onenesistance Variation with Figure 6. Drainitoisource Temperature versus Volta www.cnsemi.com a
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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0
0.2
0.4
0.6
0.8
1.0
1.2
012345678910
VDS, DRAINTOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. OnRegion Characteristics
1.8 V
VGS = 1.6 V
VGS = 1.4 V
VGS = 1.2 V
VGS = 1.0 V 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.5 1.0 1.5 2.0 2.5 3.0
VGS, GATETOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
VDS w 10 V
TJ = 25°C
TJ = 100°C
TJ = 55°C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
123456
VGS, GATETOSOURCE VOLTAGE (V)
RDS(on), DRAINTOSOURCE CURRENT
RESISTANCE (W)
Figure 3. OnResistance versus
GatetoSource Voltage
ID = 0.54 A
TJ = 25°C
5.5 V
VGS = 2.0 V to 2.2 V
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.2 0.4 0.6 0.8 1 1.2
ID, DRAIN CURRENT (A)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
RDS(on), DRAINTOSOURCE
RESISTANCE (W)
TJ = 25°C
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
TJ = 25°C
0.6
0.8
1
1.2
1.4
1.6
1.8
2
50 25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
Figure 5. OnResistance Variation with
Temperature
ID = 0.54 A
VGS = 4.5 V
10
100
1000
2 4 6 8 101214161820
VDS, DRAINTOSOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
Figure 6. DraintoSource Leakage Current
versus Voltage
TJ = 150°C
TJ = 100°C
VGS = 0 V
m 2 A i— :150 d ‘“ E g E E100 3 U Q < ‘4’="" %="" o="" 0="" 't="" v="" 50="" 0="" nj="" le="" id:0,54a="" q="" 3:260="" m="" 0="">0 0 0.2 04 0.5 DE 1 1,2 14 i 0g. TOTAL GATE CHARGE (nC) Figure B. Gatertoisource and _ _ _ _ Drainrtoisource Voltage versus Total Charge FIgure 7. Capacitance Variation g 0.5 7 / ,_ A E 0.4 g E / g 8 0.0 : § / 3 0.2 o w L” 0.1 o 1 i0 100 0,2 0.3 0.4 R9. GATE RESISTANCE (SI) VsD‘ SOUR Figure 9. Resistive Switching Time Variation Figure 10. [1 versus Gate Resistance www.cnsemi.com A
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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0
50
100
150
200
505101520
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
VDS = 0 V
TJ = 25°C
VGS = 0 V
CRSS
CISS
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0
4
8
12
16
20
VDS, DRAINTOSOURCE VOLTAGE (V)
VGS, GATETOSOURCE VOLTAGE (V)
QT
QGD
QGS
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
Qg, TOTAL GATE CHARGE (nC)
ID = 0.54 A
TJ = 25°C
VDS
VGS
1
10
100
1 10 100
t, TIME (ns)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
RG, GATE RESISTANCE (W)
td(OFF
)
tf
td(ON)
tr
VDS = 10 V
ID = 0.2 A
VGS = 4.5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
IS, SOURCE CURRENT (A)
Figure 10. Diode Forward Voltage versus
Current
VSD, SOURCETODRAIN VOLTAGE (V)
VGS = 0 V
TJ = 25°C
COSS
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
VGS VDS
ORDERING INFORMATION
Device Package Shipping
NTZD3154NT1G
SOT563
(PbFree)
4000 / Tape & Reel
NTZD3154NT1H
NTZD3154NT2G
NTZD3154NT2H
NTZD3154NT5G
8000 / Tape & Reel
NTZD3154NT5H
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTZD3154N
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5
PACKAGE DIMENSIONS
HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT563, 6 LEAD
CASE 463A
ISSUE F
eM
0.08 (0.003) X
b6 5 PL
A
C
X
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
0.08 0.12 0.18 0.003 0.005 0.007
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