MMBT,SMMBTA(42,43)L Datasheet by ON Semiconductor

| Download PDF Datasheet

0N Semiconductor® www.0nsemi.com

October, 2016 − Rev. 13

1Publication Order Number:

MMBTA42LT1/D

MMBTA42L, SMMBTA42L,

MMBTA43L

High Voltage Transistors

NPN Silicon

Features

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Characteristic Symbol Value Unit

Collector−Emitter Voltage

MMBTA42, SMMBTA42

MMBTA43

VCEO 300

200

Vdc

Collector−Base Voltage

MMBTA42, SMMBTA42

MMBTA43

VCBO 300

200

Vdc

Emitter−Base Voltage

MMBTA42, SMMBTA42

MMBTA43

VEBO 6.0

6.0

Vdc

Collector Current − Continuous IC500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

SOT−23 (TO−236)

CASE 318

STYLE 6

www.onsemi.com

COLLECTOR

BASE

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1D M G

1D = MMBTA42LT, SMMBTA42L

M1E = MMBTA43LT

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAMS

M1E M G

www onsem' com

MMBTA42L, SMMBTA42L, MMBTA43L

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0) MMBTA42, SMMBTA42

MMBTA43

V(BR)CEO 300

200

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) MMBTA42, SMMBTA42

MMBTA43

V(BR)CBO 300

200

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO 6.0 −Vdc

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0) MMBTA42, SMMBTA42

(VCB = 160 Vdc, IE = 0) MMBTA43

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0) MMBTA42, SMMBTA42

(VEB = 4.0 Vdc, IC = 0) MMBTA43

IEBO

−

0.1

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc) Both Types

(IC = 10 mAdc, VCE = 10 Vdc) Both Types

(IC = 30 mAdc, VCE = 10 Vdc) MMBTA42, SMMBTA42

MMBTA43

hFE 25

−

Collector−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc) MMBTA42, SMMBTA42

MMBTA43

VCE(sat)

−

0.5

Vdc

Base−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

VBE(sat) −0.9 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT50 −MHz

Collector−Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MMBTA42, SMMBTA42

MMBTA43

Ccb

−

3.0

4.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

/ -55°C

MMBTA42L, SMMBTA42L, MMBTA43L

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

10010.1

100

hFE, DC CURRENT GAIN

1000

Figure 2. Collector−Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (mA)

101

0.0

0.4

0.8

1.2

100

Figure 3. Base−Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

10010.1

0.2

0.8

1.0

Figure 4. Base−Emitter On Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

Figure 5. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

Figure 6. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100

100.1

0.1

C, CAPACITANCE (pF)

100

TJ = 150°C

VCE = 10 V

25°C

−55°C

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

150°C

25°C

−55°C

0.1

0.6

1.0

0.2

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

150°C

25°C

−55°C

0.6

0.4

0.1

0.7

0.9

0.5

0.3

VBE(on), BASE−EMITTER VOLTAGE (V)

10010.1

0.2

0.8

1.0

IC/IB = 10

150°C

25°C

−55°C

0.6

0.4

0.1

0.7

0.9

0.5

0.3

10010.1

−2.8

−2.0

qVB, TEMPERATURE COEFFICIENT (mV/°C)

VCE = 10 V

−55°C to 150°C

−0.4

−1.2

−2.4

−0.8

−1.6

qVB, for VBE

TJ = 25°C

f = 1 MHz

Cibo

Cobo

www onsem' com

MMBTA42L, SMMBTA42L, MMBTA43L

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 7. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

101

fTau, CURRENT−GAIN BANDWIDTH (MHz)

100

VCE = 20 V

TJ = 25°C

Figure 8. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

101

0.001

IC, COLLECTOR CURRENT (A)

1000

10 ms

100

0.1

0.01

1.0 s

ORDERING INFORMATION

Device Order Number Package Type Shipping†

MMBTA42LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

SMMBTA42LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBTA42LT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

SMMBTA42LT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

MMBTA43LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

0N Semiwndudw" w (a SCALE 4:1 7 + 7 7 w x :I: \ a - L_.L ON Semxcunduclm and ave lvademavks av Semxcanduclur Campunenls lnduslnes LLC dba ON Semxcanduclar ar \ls suhsxdmnes m xna Umled sxaxas andJm mhev commas ON Semxcunduclar vesewes ma th| to make changes wuhum Yunhev nauaa to any prnduns havem ON Semanduc‘m makes m7 wanamy represenlalmn m guarantee regardmg ma swamy at W; manuals can any pamcu‘av purpase nnv dues ON Semumnduclm assume any Mammy ansmg mac xna apphcahan m use no any pmduclnv mum and saaamcauy dwsc‘axms any and au Mammy mc‘udmg wmnam hmma‘mn spema‘ cansequenha‘ m \nmdenla‘ damages ON Semxmnduclar dues nn| aanyay any hcense under Ms pa|em thls nar xna ngms av n|hers

SOT−23 (TO−236)

CASE 318−08

ISSUE AS

DATE 30 JAN 2018

SCALE 4:1

XXXMG

XXX = Specific Device Code

M = Date Code

G= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

GENERIC

MARKING DIAGRAM*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

STYLE 22:

PIN 1. RETURN

2. OUTPUT

3. INPUT

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 7:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

STYLE 9:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 10:

PIN 1. DRAIN

2. SOURCE

3. GATE

STYLE 11:

PIN 1. ANODE

2. CATHODE

3. CATHODE−ANODE

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

STYLE 13:

PIN 1. SOURCE

2. DRAIN

3. GATE

STYLE 14:

PIN 1. CATHODE

2. GATE

3. ANODE

STYLE 15:

PIN 1. GATE

2. CATHODE

3. ANODE

STYLE 16:

PIN 1. ANODE

2. CATHODE

3. CATHODE

STYLE 17:

PIN 1. NO CONNECTION

2. ANODE

3. CATHODE

STYLE 18:

PIN 1. NO CONNECTION

2. CATHODE

3. ANODE

STYLE 19:

PIN 1. CATHODE

2. ANODE

3. CATHODE−ANODE

STYLE 23:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 20:

PIN 1. CATHODE

2. ANODE

3. GATE

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

STYLE 1 THRU 5:

CANCELLED

STYLE 24:

PIN 1. GATE

2. DRAIN

3. SOURCE

STYLE 25:

PIN 1. ANODE

2. CATHODE

3. GATE

STYLE 26:

PIN 1. CATHODE

2. ANODE

3. NO CONNECTION

STYLE 27:

PIN 1. CATHODE

2. CATHODE

3. CATHODE

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.027

0−−− 10 0 −−− 10

T°°°°

TOP VIEW

SIDE VIEW

END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

STYLE 28:

PIN 1. ANODE

2. ANODE

3. ANODE

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

98ASB42226B

DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

SOT−23 (TO−236)

a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

TECHNICAL SUPPORT

North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada

Phone: 011 421 33 790 2910

LITERATURE FULFILLMENT:

Email Requests to: [email protected]

ON Semiconductor Website: www.onsemi.com

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910

For additional information, please contact your local Sales Representative