MJD31 (NPN), MJD32 (PNP) Datasheet by ON Semiconductor

View All Related Products | Download PDF Datasheet
0N Selliim‘mdllctorg www.0nsemi.com nnn £%n’%
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 16 1Publication Order Number:
MJD31/D
MJD31 (NPN), MJD32 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
VCEO 40
100
Vdc
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
VCB 40
100
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC3.0 Adc
Collector Current − Peak ICM 5.0 Adc
Base Current IB1.0 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD15
0.12
W
W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD1.56
0.012
W
W/°C
Operating and Storage Junction Temperature
Range TJ, Tstg 65 to
+150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 8.3 °C/W
Thermal Resistance, Junction−to−Ambient* RqJA 80 °C/W
Lead Temperature for Soldering Purposes TL260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
A = Site Code
Y = Year
WW = Work Week
xx = 1, 1C, 2, or 2C
G = Pb−Free Package
AYWW
J3xxG
YWW
J3xxG
www.onsemi.com
DPAK IPAK
4
123
4
123
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
COMPLEMENTARY
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
MJD31, MJD32
MJD31C, MJD32C
VCEO(sus)
40
100
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
MJD31, MJD32
(VCE = 60 Vdc, IB = 0)
MJD31C, MJD32C
ICEO
50
50
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES 20 mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO 1 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
hFE 25
10
50
Collector−Emitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
VCE(sat) 1.2 Vdc
Base−Emitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
VBE(on) 1.8 Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT3 MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe 20 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = hfe⎪• ftest.
PD, POWER DISSIPATION (WATTS) TMSURFACE MOUNT} ,gv Tc 1,. «I 5 ID ns : DUTV CYCLE : i% 25 50 75 100 i25 150 T. TEMPERATURE PC) Figure 1. Power Deraling Figure 2. Swilching Time Tesl Cir i.@vcc:30v (.TIME 105) 0 I 0.07 0.05 0.03 003 005007 0i 0.2 03 0,5 07 i is COLECTOR CURRENT {AMPS} i5. COLLECTOR CURRENT {AMPS} Figure 3. Turn—On Time Sin 0 01 0.000001 0.000 www.0nse
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
3
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Test Circuit
3
0.03
IC, COLLECTOR CURRENT (AMPS)
0.03 0.05 0.07 0.1 0.2 0.5 0.7
IB1 = IB2
IC/IB = 10
ts = ts - 1/8 tf
TJ = 25°C
t, TIME (s)μ
0.3
2
1
0.7
0.5
0.3
ts
0.2
0.1
0.07
0.05
12
Figure 3. Turn−On Time
2
IC, COLLECTOR CURRENT (AMPS)
0.02
IC/IB = 10
TJ = 25°C
t, TIME (s)μ
1
0.7
0.5
0.3
0.1
0.07
0.05
0.03
+11 V
25 ms
0
-9 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf 10 ns
DUTY CYCLE = 1%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
REVERSE ALL POLARITIES FOR PNP.
0.03 0.07 0.3 30.1 0.7
0.05 0.5 1
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
tf @ VCC = 30 V
tf @ VCC = 10 V
2.5
0
2
1.5
1
0.5
TATC
Figure 4. Turn−Off Time
TA (SURFACE MOUNT)
TC
TYPICAL CHARACTERISTICS
Figure 5. Thermal Response
0.000001 0.0010.0001 0.1
100
1
0.01 0.01
t, PULSE TIME (sec)
R
qJA
(
°
C/W)
110100 1000
0.1
10
0.00001
0.2
Single Pulse
0.1
0.05
0.02
0.01
Duty Cycle = 0.5
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
4
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1
10
100
1000
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain at VCE = 4 V
hFE, DC CURRENT GAIN
VCE = 4 V
25°C
150°C
−55°C
1
10
100
1000
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 7. DC Current Gain at VCE = 2 V
hFE, DC CURRENT GAIN
VCE = 2 V
25°C
150°C
−55°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 8. Collector−Emitter Saturation Voltage
VCE(sat), COLL−EMITT SATURATION
VOLTAGE (V)
IC/IB = 10
25°C
150°C
−55°C
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 9. Base−Emitter Saturation Voltage
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001 0.01 0.1 1 10
VCE = 5 V
VBE(on), BASE−EMITTER ON VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 10. Base-Emitter “On” Voltage
−55°C
25°C
150°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001 0.01 0.1 1 10
IC/IB = 10
−55°C
25°C
150°C
0
0.4
0.8
1.2
1.6
2
0.01 0.1 1 10 100 1000
IB, BASE CURRENT (mA)
Figure 11. Collector Saturation Region
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10 mA
100 mA 500 mA
1 A
IC = 3 A
TA =
25°C
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
5
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1
10
100
1000
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
Figure 12. Capacitance
C, CAPACITANCE (pF)
Cib
Cob
TA = 25°C
1
10
100
0.001 0.01 0.1 1 10
VCE = 5 V
TA = 25°C
IC, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
0.01
0.1
1
10
1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
IC, COLLECTOR CURRENT (A)
\ \\\
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
6
TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
1
10
100
1000
0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 15. DC Current Gain at VCE = 4 V
h
FE
, DC CURRENT GAIN
VCE = 4 V
25°C
150°C
−55°C
1
10
100
1000
0.01 0.1 1 1
0
IC, COLLECTOR CURRENT (A)
Figure 16. DC Current Gain at VCE = 2 V
hFE, DC CURRENT GAIN
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.001 0.01 0.1 1 10
VCE = 2 V
25°C
150°C
−55°C
25°C
150°C
−55°C
IC, COLLECTOR CURRENT (A)
Figure 17. Collector−Emitter Saturation
Voltage
V
CE(sat)
, COLL−EMITT SATURATION
VOLTAGE (V)
IC/IB = 10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001 0.01 0.1 1 1
0
25°C
150°C
−55°C
IC, COLLECTOR CURRENT (A)
Figure 18. Base−Emitter Saturation Voltage
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001 0.01 0.1 1 10
VCE = 5 V
25°C
150°C
−55°C
IC, COLLECTOR CURRENT (A)
Figure 19. Base−Emitter “On” Voltage
V
BE(on)
, BASE−EMITTER ON
VOLTAGE (V)
0
0.4
0.8
1.2
1.6
2
0.01 0.1 1 10 100 100
0
IB, BASE CURRENT (mA)
Figure 20. Collector Saturation Region
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10 mA
100 mA
500 mA
1 A IC = 3 A
TA =
25°C
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
7
TYPICAL CHARACTERISTICS
1
10
100
1000
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
Figure 21. Capacitance
C, CAPACITANCE (pF)
Cib
Cob
TA = 25°C
1
10
100
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 22. Current−Gain−Bandwidth Product
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
VCE = 5 V
TA = 25°C
0.01
0.1
1
10
1 10 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 23. Safe Operating Area
IC, COLLECTOR CURRENT (A)
1 ms
1 s
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
8
ORDERING INFORMATION
Device Package Type Package Shipping
MJD31CG DPAK
(Pb−Free) 369C 75 Units / Rail
NJVMJD31CG* DPAK
(Pb−Free) 369C 75 Units / Rail
MJD31C1G IPAK
(Pb−Free) 369D 75 Units / Rail
MJD31CRLG DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
NJVMJD31CRLG* DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
MJD31CT4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD31CT4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
MJD31T4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD31T4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
MJD32CG DPAK
(Pb−Free) 369C 75 Units / Rail
NJVMJD32CG* DPAK
(Pb−Free) 369C 75 Units / Rail
MJD32CRLG DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
MJD32CT4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD32CT4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
MJD32RLG DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
MJD32T4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD32T4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.0nsemi.com
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
9
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
b
D
E
b3
L3
L4b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
eBOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
10
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
G
D3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −− 3.93 −−−
IPAK
CASE 369D
ISSUE C
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MJD31/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative

Products related to this Datasheet

TRANS NPN 100V 3A DPAK
TRANS PNP 100V 3A DPAK
TRANS NPN 100V 3A DPAK
TRANS NPN 100V 3A DPAK
TRANS PNP 100V 3A DPAK
TRANS NPN 40V 3A DPAK
TRANS PNP 100V 3A DPAK
TRANS NPN 100V 3A DPAK
TRANS NPN 100V 3A DPAK
TRANS PNP 100V 3A DPAK
TRANS PNP 100V 3A DPAK
TRANS NPN 100V 3A DPAK-4
TRANS NPN 40V 3A DPAK
TRANS NPN 100V 3A DPAK
TRANS PNP 40V 3A DPAK
TRANS PNP 100V 3A DPAK-4
TRANS NPN 100V 3A IPAK
TRANS NPN 100V 3A DPAK
TRANS PNP 100V 3A DPAK
TRANS NPN 100V 3A DPAK
TRANS NPN 100V 3A DPAK
TRANS NPN 100V 3A DPAK
TRANS PNP 100V 3A DPAK
TRANS NPN 100V 3A IPAK
TRANS NPN 100V 3A DPAK
TRANS PNP 100V 3A DPAK
TRANS PNP 100V 3A DPAK
TRANS PNP 40V 3A DPAK
TRANS PNP 40V 3A DPAK
TRANS NPN 100V 3A DPAK