In summary, the RF power market demands the very high RF ruggedness that LDMOS can deliver. The 50V devices designed by NXP are fabricated on NXP’s unique very high voltage sixth-generation (VHV6) platform, and have been fully qualified and are shipping in volume. NXP’s highly rugged RF Power transistors are suitable for highly mismatched applications within the commercial Aerospace, Broadcast, and Industrial, Scientific and Medical (ISM) markets. The enhanced ruggedness technology is available on four 50V LDMOS devices: the 300W MRFE6VP6300H/HS, the 600W MRFE6VP5600H/HS, the 1.25kW MRFE6VP61K25H/HS and the 125W avg/600W PEP MRFE6VP8600H/HS, all of which are capable of withstanding a 65:1 VSWR at their respective power levels. Each of the devices can be operated from 1.8MHz up to 860MHz and offers integrated ESD protection. NXP offers high RF performance package designs, consistent and repeatable RF performance, as well as proven reliability and consistent quality. This is supported by high volume manufacturing capability and assured long term supply.