NXP now offers four highly rugged 50V power devices designed for ISM and Broadcast applications - each offering 65:1 VSWR capability at their rated power levels. These 50V devices cover power levels from 300W to 1.25kW and frequencies from 1.8MHz to 860MHz. The enhanced ruggedness devices are suitable for use in high VSWR Industrial, Broadcast and Aerospace applications. The MRFE6VP6300H (300W), MRFE6VP5600H (600W), MRFE6VP61K25H (1.25kW) and MRFE6VP8600H (125W avg/600W PEP) represent NXP’s full line of enhanced ruggedness RF power transistors, designed for applications operating at frequencies between 1.8 and 860MHz. These devices are suitable for use in high VSWR Industrial, Broadcast and Aerospace applications. The MRFE6VP61K25H is a versatile device and is well-suited for a wide range of applications. It is capable of delivering over 1.2kW CW and will withstand extreme mismatches, even at full rated output power. This is due to its high efficiency, low thermal resistance and ruggedized silicon design. The latest addition to NXP’s family of RF power LDMOS transistors for the Broadcast market, the MRFE6VP8600H, delivers 39% greater output power than its predecessor and is designed to deliver maximum performance with any of today’s digital transmission standards such as ATSC, DVB-T and ISDB-T. The transistor delivers 125W of linear power (more than 600W peak envelope power) over the entire broadcast band with exceptional efficiency. Each of the highly rugged transistors shown on this slide are in full production.