NXP first introduced 50V LDMOS technology in 2006. Its features include high RF figures of merit in gain, efficiency, thermal resistance and linearity. Many of NXP’s 50V LDMOS transistors also feature a novel ESD protection optimized class C operation and isolation. In November 2010, NXP announced an advancement in high power RF technology, enhanced ruggedness. The enhanced ruggedness line of Broadcast devices is designed to handle operating into a voltage standing wave ratio (VSWR) greater than 65:1. The rugged E series portfolio of 50V high-power devices enables broadcast transmitter designers to meet the most challenging performance, reliability and ruggedness requirements of the HF, VHF and UHF radio and television transmitter industry. The latest addition to NXP’s family of RF power LDMOS transistors is the MRFE6VP8600H. In addition to its ruggedness, the MRFE6VP8600H’s high output power capability and high gain enhance system-level efficiency for Broadcast applications.