Power Driver Modules

Results: 6
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Showing
of 6
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Type
Configuration
Current
Voltage
Voltage - Isolation
Grade
Qualification
Mounting Type
Package / Case
52 VQFN
LMG3522R030RQSR
650-V 30-M GAN FET WITH INTEGRAT
Texas Instruments
1,639
In Stock
1 : $211.90000
Cut Tape (CT)
2,000 : $106.10330
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET
Half Bridge Inverter
55 A
650 V
-
-
-
Surface Mount
52-VQFN Exposed Pad
LMG3526R030RQST
LMG3522R030QRQSTQ1
AUTOMOTIVE 650-V 30-M GAN FET WI
Texas Instruments
250
In Stock
1 : $291.14000
Cut Tape (CT)
250 : $200.86492
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET
Half Bridge Inverter
55 A
650 V
-
Automotive
AEC-Q100
Surface Mount, Wettable Flank
52-VQFN Exposed Pad
LMG3526R030RQST
LMG3526R030RQST
650-V 30-M GAN FET WITH INTEGRAT
Texas Instruments
250
In Stock
1 : $258.88000
Cut Tape (CT)
250 : $194.51468
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET
Half Bridge Inverter
55 A
650 V
-
-
-
Surface Mount, Wettable Flank
52-VQFN Exposed Pad
LMG3526R030RQSR
LMG3526R030RQSR
650-V 30-M GAN FET WITH INTEGRAT
Texas Instruments
1,819
In Stock
1 : $226.12000
Cut Tape (CT)
2,000 : $149.82518
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET
Half Bridge Inverter
55 A
650 V
-
-
-
Surface Mount, Wettable Flank
52-VQFN Exposed Pad
52 VQFN
LMG3522R030RQST
650-V 30-M GAN FET WITH INTEGRAT
Texas Instruments
523
In Stock
1 : $242.78000
Cut Tape (CT)
250 : $165.64804
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
MOSFET
Half Bridge Inverter
55 A
650 V
-
-
-
Surface Mount
52-VQFN Exposed Pad
LMG3522R030QRQSRQ1
LMG3522R030QRQSRQ1
AUTOMOTIVE 650-V 30-M GAN FET WI
Texas Instruments
0
In Stock
Check Lead Time
2,000 : $126.95794
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
MOSFET
Half Bridge Inverter
55 A
650 V
-
Automotive
AEC-Q100
Surface Mount, Wettable Flank
52-VQFN Exposed Pad
Showing
of 6

Power Driver Modules


Power driver modules provide the physical containment for power components, usually IGBTs and MOSFETs in a half bridge or one-, two- or three-phase configurations. Power semiconductors or dies are soldered or sintered on a substrate that carries the power semiconductors and provides electrical and thermal contact and electrical insulation where needed. Power modules provide a higher power density and are in many cases more reliable and easier to cool.