CGHV27060MP GaN HEMT

Wolfspeed's gallium nitride (GaN) high electron mobility transistor (HEMT) features a 2.5 GHz to 2.7 GHz reference design amplifier

Image of Wolfspeed's GaN HEMTWolfspeed’s CGHV27060MP is a 60 W GaN HEMT housed in a small (4.4 mm x 6.5 mm) plastic SMT package. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L-band, or low S-band (< 2.7 GHz). Additionally, the transistor is well-suited for LTE micro base station amplifiers in the power class of 10 W to 15 W average power in high efficiency topologies such as Class A / B, F, or Doherty amplifiers.

Features
  • 2.5 GHz to 2.7 GHz reference design amplifier
  • 18.5 dB gain at 14 W PAVE
  • -35 dBc ACLR at 14 W PAVE
  • 35% efficiency at 14 W PAVE
  • High degree of DPD correction can be applied
  • 16.5 dB gain at pulsed PSAT
  • 70% efficiency at pulsed PSAT
  • 80 W at pulsed PSAT

GaN HEMT

ImageManufacturer Part NumberDescriptionTransistor TypeAvailable QuantityView Details
CGHV27060MP datasheet linkRF MOSFET HEMT 50V 20TSSOPCGHV27060MPRF MOSFET HEMT 50V 20TSSOPHEMT48 - Immediate
CGHV27060MP product page link
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Published: 2017-05-24