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MMBT,SMMBTA(42,43)L Datasheet

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Datasheet

© Semiconductor Components Industries, LLC, 1994
October, 2016 Rev. 13
1Publication Order Number:
MMBTA42LT1/D
MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic Symbol Value Unit
CollectorEmitter Voltage
MMBTA42, SMMBTA42
MMBTA43
VCEO 300
200
Vdc
CollectorBase Voltage
MMBTA42, SMMBTA42
MMBTA43
VCBO 300
200
Vdc
EmitterBase Voltage
MMBTA42, SMMBTA42
MMBTA43
VEBO 6.0
6.0
Vdc
Collector Current Continuous IC500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT23 (TO236)
CASE 318
STYLE 6
2
3
1
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1D M G
G
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAMS
1
M1E M G
G
MMBTA42L, SMMBTA42L, MMBTA43L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0) MMBTA42, SMMBTA42
MMBTA43
V(BR)CEO 300
200
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0) MMBTA42, SMMBTA42
MMBTA43
V(BR)CBO 300
200
Vdc
EmitterBase Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO 6.0 Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0) MMBTA42, SMMBTA42
(VCB = 160 Vdc, IE = 0) MMBTA43
ICBO
0.1
0.1
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0) MMBTA42, SMMBTA42
(VEB = 4.0 Vdc, IC = 0) MMBTA43
IEBO
0.1
0.1
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc) Both Types
(IC = 10 mAdc, VCE = 10 Vdc) Both Types
(IC = 30 mAdc, VCE = 10 Vdc) MMBTA42, SMMBTA42
MMBTA43
hFE 25
40
40
40
CollectorEmitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc) MMBTA42, SMMBTA42
MMBTA43
VCE(sat)
0.5
0.5
Vdc
BaseEmitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat) 0.9 Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT50 MHz
CollectorBase Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MMBTA42, SMMBTA42
MMBTA43
Ccb
3.0
4.0
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBTA42L, SMMBTA42L, MMBTA43L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
10010.1
10
100
hFE, DC CURRENT GAIN
1000
10
Figure 2. CollectorEmitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
101
0.0
0.4
0.8
1.2
100
Figure 3. BaseEmitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA)
10010.1
0
0.2
0.8
1.0
10
Figure 4. BaseEmitter On Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA)
Figure 5. BaseEmitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100
0
100.1
0.1
1
10
C, CAPACITANCE (pF)
100
100
TJ = 150°C
VCE = 10 V
25°C
55°C
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
25°C
55°C
0.1
0.6
1.0
0.2
VBE(sat), BASEEMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
25°C
55°C
0.6
0.4
0.1
0.7
0.9
0.5
0.3
VBE(on), BASEEMITTER VOLTAGE (V)
10010.1
0
0.2
0.8
1.0
10
IC/IB = 10
150°C
25°C
55°C
0.6
0.4
0.1
0.7
0.9
0.5
0.3
10010.1
2.8
2.0
10
qVB, TEMPERATURE COEFFICIENT (mV/°C)
VCE = 10 V
55°C to 150°C
0.4
1.2
2.4
0
0.8
1.6
qVB, for VBE
TJ = 25°C
f = 1 MHz
Cibo
Cobo
1
MMBTA42L, SMMBTA42L, MMBTA43L
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. CurrentGain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
101
10
fTau, CURRENTGAIN BANDWIDTH (MHz)
100
100
VCE = 20 V
TJ = 25°C
Figure 8. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
101
0.001
IC, COLLECTOR CURRENT (A)
1
1000
10 ms
100
0.1
0.01
1.0 s
ORDERING INFORMATION
Device Order Number Package Type Shipping
MMBTA42LT1G SOT23
(PbFree)
3,000 / Tape & Reel
SMMBTA42LT1G SOT23
(PbFree)
3,000 / Tape & Reel
MMBTA42LT3G SOT23
(PbFree)
10,000 / Tape & Reel
SMMBTA42LT3G SOT23
(PbFree)
10,000 / Tape & Reel
MMBTA43LT1G SOT23
(PbFree)
3,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MMBTA42L, SMMBTA42L, MMBTA43L
www.onsemi.com
5
PACKAGE DIMENSIONS
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
MMBTA42LT1/D
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