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BAS,SBAS16L Datasheet

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Datasheet

© Semiconductor Components Industries, LLC, 1994
February, 2019 Rev. 13
1Publication Order Number:
BAS16LT1/D
BAS16L
Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR100 V
Peak Forward Current IF200 mA
NonRepetitive Peak Forward Surge
Current 60 Hz
IFSM(surge) 1.8 mA
Repetitive Peak Forward Current
(Note 3)
IFRM 1.0 A
NonRepetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 s
IFSM
36.0
18.0
6.0
3.0
1.8
1.3
1.0
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
Device Package Shipping
ORDERING INFORMATION
SOT23
CASE 318
STYLE 8
MARKING
DIAGRAM
1
2
3
BAS16LT1G SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
BAS16LT3G SOT23
(PbFree)
10000/Tape & Reel
1
A6 M G
G
A6 = Specific Device Code
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SBAS16LT1G SOT23
(PbFree)
3000/Tape & Reel
SBAS16LT3G SOT23
(PbFree)
10000/Tape & Reel
www.onsemi.com
BAS16L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 V)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
IR
1.0
50
30
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR) 100 Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
715
855
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD2.0 pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR 1.75 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
trr 6.0 ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)
QS45 pC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 W
0.1 mF
D.U.T.
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS16L
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3
TYPICAL CHARACTERISTICS
0.1
VF, FORWARD VOLTAGE (V)
0.01
10
0
VR, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.62
0
VR, REVERSE VOLTAGE (V)
0.60
0.56
0.50
0.48
CD, DIODE CAPACITANCE (pF)
246 8
IF, FORWARD CURRENT (mA)
Figure 2. VF vs. IFFigure 3. IR vs. VR
Figure 4. Capacitance
IR, REVERSE CURRENT (μA)
0.1
1.0
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
85°C
55°C
150°C
125°C
25°C
-40°C
-55°C
60 70
-40°C
150°C
125°C
85°C
55°C
25°C
0.52
0.54
0.58
1357
85°C
Cap
Figure 5. Maximum Nonrepetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
tp (mSec)
10.10.010.001
0
5
10
15
20
25
IFSM (A)
10
30
35
40
Based on square wave currents
TJ = 25°C prior to surge
0.0001 100 1000
BAS16L
www.onsemi.com
4
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AS
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
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BAS16LT1/D
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