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Product Overview
Digi-Key Part Number SIHB33N60E-GE3-ND
Quantity Available 1,508
Can ship immediately
Manufacturer

Manufacturer Part Number

SIHB33N60E-GE3

Description MOSFET N-CH 600V 33A TO-263
Expanded Description N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 19 Weeks
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Bulk ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Rds On (Max) @ Id, Vgs 99 mOhm @ 16.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
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Additional Resources
Standard Package ? 1,000
Other Names SIHB33N60EGE3

23:16:22 1/23/2017

Price & Procurement
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 49.86000 49.86
10 44.80900 448.09
25 42.36040 1,059.01
100 36.71080 3,671.08
250 34.82820 8,707.05
500 31.25124 15,625.62
1,000 26.35646 26,356.46
2,500 25.03864 62,596.60

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