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Product Overview
Digi-Key Part Number IRFD110PBF-ND
Quantity Available 2,503
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFD110PBF

Description MOSFET N-CH 100V 1A 4-DIP
Expanded Description N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 9 Weeks
Documents & Media
Datasheets IRFD110
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Ultra Librarian
Catalog Page 1177 (HK092-10 PDF)
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 540 mOhm @ 600mA, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
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Additional Resources
Standard Package ? 100
Other Names *IRFD110PBF

14:58:43 3/1/2017

Price & Procurement
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 6.11000 6.11
10 5.34300 53.43
25 5.02040 125.51
100 4.09760 409.76
250 3.80624 951.56
500 3.23944 1,619.72
1,000 2.59155 2,591.55
2,500 2.34861 5,871.52
5,000 2.18662 10,933.10

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