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Product Overview
Digi-Key Part Number SCT2160KEC-ND
Quantity Available 2,575
Can ship immediately
Manufacturer

Manufacturer Part Number

SCT2160KEC

Description MOSFET N-CH 1200V 22A TO-247
Expanded Description N-Channel 1200V (1.2kV) 22A (Tc) 165W (Tc) Through Hole TO-247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 20 Weeks
Documents & Media
Datasheets SCT2160KE
Mfg Application Notes SiC Power Devices and Modules
Product Training Modules SiC MOSFETs
Video File ROHM Semiconductor SiC MOSFET Technology
Featured Product 2nd Generation High-Voltage SiC MOSFETs
1200 V Silicon Carbide (SiC) Diodes
Product Attributes Select All
Categories
Manufacturer

Rohm Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 800V
Vgs (Max) +22V, -6V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Rds On (Max) @ Id, Vgs 208 mOhm @ 7A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
 
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Additional Resources
Standard Package ? 360

12:28:15 2/27/2017

Price & Procurement
 

Quantity
All prices are in HKD.
Price Break Unit Price Extended Price
1 82.43000 82.43
100 75.78840 7,578.84

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