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Product Overview
Digi-Key Part Number C2M0080120D-ND
Quantity Available 2,124
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 1200V 31.6A TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Documents & Media
Datasheets C2M0080120D
Mfg Application Notes SiC MOSFET Isolated Gate Driver
Featured Product Cree - Silicon Carbide Power MOSFETs
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Product Attributes Select All

Discrete Semiconductor Products


Transistors - FETs, MOSFETs - Single



Series C2M™
Packaging ? Bulk ?
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Rds On (Max) @ Id, Vgs 98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) @ Vgs 62nC @ 5V
Input Capacitance (Ciss) @ Vds 950pF @ 1000V
Power - Max 192W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Associated Product
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Additional Resources
Standard Package ? 30

20:47:01 10/26/2016

Price & Procurement

All prices are in HKD.
Price Break Unit Price Extended Price
1 141.36000 141.36
100 135.93760 13,593.76
500 132.50312 66,251.56

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